2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan
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International Conference on Solid State Devices and Materials
2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan

[A-1-2]High Speed and High Efficiency Si Optical Modulator with MOS Junction, Using Large-Grain of Poly-Silicon Gate

J. Fujikata1,2、M. Takahashi1,3、S. Takahashi1,2、T. Akagawa1,2、M. Noguchi1,2、T. Horikawa1,3、T. Nakamura1,2、Y. Arakawa1,4(1.PECST、2.PETRA、3.AIST、4.Univ. of Tokyo , Japan)
https://doi.org/10.7567/SSDM.2012.A-1-2
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