[A-1-1]Silicon/Ge/Silica monolithic photonic integration for telecommunications applications.
K. Yamada1、T. Tsuchizawa1、H. Nishi1、R. Kou1、T. Hiraki1、H. Fukuda1、Y. Ishikawa2、K. Wada2(1.NTT Corporation、2.Univ of Tokyo , Japan)
2012 International Conference on Solid State Devices and Materials
2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan
当該イベント内で検索します。
検索する
2012 International Conference on Solid State Devices and Materials
2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan
当該イベント内で検索します。
検索する検索結果(665)
[A-1-2]High Speed and High Efficiency Si Optical Modulator with MOS Junction, Using Large-Grain of Poly-Silicon Gate
J. Fujikata1,2、M. Takahashi1,3、S. Takahashi1,2、T. Akagawa1,2、M. Noguchi1,2、T. Horikawa1,3、T. Nakamura1,2、Y. Arakawa1,4(1.PECST、2.PETRA、3.AIST、4.Univ. of Tokyo , Japan)
[A-1-3]Electrical and Optical Characteristic Modeling of Silicon Modulator
T. Akagawa1,2、S. Akiyama1,2、T. Baba1,2、M. Imai1,2、T. Usuki1,2(1.Inst. for Photonics-Electronics Convergence System Tech. (PECST)、2.Photonics Electronics Tech. Research Association (PETRA) , Japan)
[A-1-4]Strain tuning of Franz-Keldysh Ge electro-absorption modulation
R. Kuroyanagi1、M. L. Nguyen1、T. Tsuchizawa2、Y. Ishikawa1、K. Yamada2、K. Wada1(1.Univ. of Tokyo、2.NTT Microsystem Tech. Labs., NTT Corp. , Japan)
[A-1-5]Optimization of taper structures for III-V on Silicon lasers
D. Van Thourhout1、S. Keyvaninia1、G. Roelkens1、M. Lamponi2、F. Lelarge2、J. M. Fedeli3、S. Messaoudene3、G.D. Duan2(1.Ghent Univ.-IMEC , Belgium、2.III-V lab、3.CEA-LETI , France)
[A-1-6]Operation power reduction of Si electro-optics switch by decreasing current leakage
T. Matsumoto1、S. Sekiguchi1、T. Kurahashi1、K. Morito1(1.Fujitsu Labs. , Japan)
[A-2-1]The impacts of ArF Excimer Immersion Lithography on Integrated Silicon Photonics Tech.
H. Takahasi1,2、M. Toyama1,3、M. Seki1,3、D. Shimura1,2、K. Koshino1,3、N. Yokoyama1,3、M. Ohtsuka1,3、A. Sugiyama1,3、E. Ishitsuka1,3、T. Sano1,3、T. Horikawa1,3(1.Inst. for Photonics-Electronics Convergence System Tech.(PECST)、2.Photonics Electronics Tech. Research Association(PETRA)、3.National Inst. of Advanced Industrial Science and Tech.(AIST) , Japan)
[A-2-2]Low-loss Si waveguides with Variable-Shaped-Beam EB Lithography for Large-scaled Photonic Circuits
N. Hirayama1,2、H. Takahashi1,3、Y. Noguchi1,2、M. Yamagishi1,2、T. Horikawa1,2(1.Inst. for Photonics-Electronics Convergence System Tech.、2.National Inst.of Advanced Industrial Science and Tech.、3.Photonics Electronics Tech. Res. Association , Japan)
[A-2-3]Characterization of Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots
H. Takami1、K. Makihara1、M. Ikeda2、S. Miyazaki1(1.Univ. of Nagoya、2.Univ. of Hiroshima , Japan)
[A-2-4]Design of Silicon Photonic Crystal Waveguides for High Gain Raman Amplification Using Two Symmetric TE-Like Slow-Light Modes
Y. H. Hsiao1、S. Iwamoto1、Y. Arakawa1(1.Univ. of Tokyo , Japan)
[A-2-5]Mixture formaion of ErxYb2-xSi2O7 and ErxYb2-xO3 for broadening the C - band in an optical amplifier on Si
H. Omi1,2、Y. Abe1、M. Anagnosti1、T. Tawara1,2(1.NTT Basic Research Labs., NTT Corp、2.Nanophotonics Center, NTT Corp. , Japan)
[A-2-6]Fabrication of Er silicate crystalline waveguide by directed self-assembly approach using radical assisted sputtering
T. Nakajima1、T. Shinagawa1、T. Kimura1、H. Isshiki1、T. Sugawara2、Y. Jiang2(1.Univ. of Electro-Communications、2.Shincron Co. Ltd. , Japan)
[A-2-7]Theoretical analysis method of vertical coupling optical I/O interface with mirrors
M. Nara1、T. Kita1、Y. Tanushi1、H. Yamada1(1.Tohoku Univ. , Japan)
[A-3-1]Quantum information device based on NV center in diamond
N. Mizuochi1(1.Osivaka Univ. , Japan)
[A-3-2]Strongly enhanced four-wave mixing signal from GaAs/AlAs cavity with InAs QDs embedded in strain-relaxed barriers
Y. Yasunaga1、H. Ueyama1、K. Morita1、T. Kitada1、T. Isu1(1.Univ. of Tokushima , Japan)
[A-3-3]Fiber fuse terminator for above 20 W input
K. Kurokawa1、N. Hanzawa1(1.NTT Corp. , Japan)
[A-3-4]2f-3f Optical Wavelength Conversion Device with PPLN waveguides
K. Hitachi1、A. Ishizawa1、T. Nishikawa1、M. Asobe2、T. Sogawa1(1.NTT Basic Res. Lab.、2.NTT Photonics Lab. , Japan)
[A-4-1]Plasmonic EM absorbers and photothermal effects
M. Qiu1,2、X. Chen2、Y. Chen2、M. Yan2(1.Department of Optical Engineering, Zhejiang Univ. , China、2.School of Information and Communication Tech., Royal Inst. of Tech. (KTH) , Sweden)
[A-4-2]Room temperature lasing in metal-coated GaN by grating structure
W. H. Hsu1、M. H. Shih2、H. C. Kuo1(1.Univ. of National Chiao-Tung、2.Academia Sinica , Taiwan)
[A-4-3]Wavelength Fine-tuning of Photonic Crystal Rods Laser on a Flexible Substrate
K. T. Lai1,2、M. Y. Kuo1、K S. Hsu1,3、C. T. Lin2、M. H. Shih1,3(1.Academia Sinica、2.National Chiao Tung Univ.、3.National Chiao Tung Univ. , R.O.C. (Taiwan))
[A-5-1]Ultrafast directly modulated single-mode photonic crystal nanocavity light-emitting diode
G. Shambat1、B. Ellis1、A. Majumdar1、J. Petykiewicz1、M. Mayer2、T. Sarmiento1、J. Harris1、E. Haller2、J. Vuckovic1(1.Electrical engineering department, Stanford Univ.、2.Department of of Materials Science, Univ. of California, , USA)
[A-5-2]Room temperature 1.55 μm electroluminescence from Ge quantum dots embedded in H1-type photonic crystal nanocavities using lateral current injection
X. Xu1、T. Tsuboi1、T. Chiba1、T. Maruizumi1、Y. Shiraki1(1.Tokyo City Univ. , Japan)
[A-5-3]Electro-Mechanical Control of Q factor in Photonic Crystal Nanobeam Cavity
R. Ohta1、Y. Ota1、H. Takagi1、N. Kumagai1、K. Tanabe1、S. Ishida1、S. Iwamoto1、Y. Arakawa1(1.Univ. of Tokyo , Japan)
[A-6-1]Generic Integration Processes for InP based Application Specific Photonic Integrated Circuits (ASPICs) in Europe: Current Status and future Prospects.
H. P.M.M. Ambrosius1、X. J.M. Leijtens1、M. K. Smit1(1.Eindhoven Univ. of Tech. , The Netherlands)
[A-6-2]1.3-μm-Waveband Quantum-Dot External-Cavity Laser for Near-Infrared Microscopic Bio-Medical Imaging
Y. Yoshioka1,2、N. Yamamoto1、K. Akahane1、T. Kawanishi1、M. Kuroda1、H. Takai2(1.NICT、2.Tokyo Denki Univ , Japan)
[A-6-3]Low Power Consumption Operation of a 1.06-μm-Wavelength Single-Mode Laser for Efficient Second-Harmonic-Generation Green Laser Modules
A. Hayakawa1、H. Z. Song1、T. Matsumoto1、M. Matsuda1、T. Kageyama2、Y. Yokoyama2、K. Nishi2,3、K. Takemasa2,3、M. Ekawa1、Y. Tanaka1、T. Yamamoto1,2、M. Sugawara2,3、Y. Arakawa3,4(1.Fujitsu Laboratories Ltd.、2.QD Laser, Inc.、3.Inst. for Nano Quantum Info. Electronics、4.The Univ. of Tokyo , Japan)
[A-6-4]GaAs/AlAs multilayer cavity with Er-doped InAs quantum dots embedded in extremely thin strain-relaxed InGaAs barriers for ultrafast all-optical switches
K. Morita1、H. Ueyama1、Y. Yasunaga1、Y. Nakagawa1,2、T. Kitada1、T. Isu1(1.Univ. of Tokushima、2.NICHIA Corp. , Japan)
[A-6-5]Undercut GaAs/In0.5Ga0.5P High-Speed Laser Power Converter for Simultaneous 10 Gbit/sec Data Detection and Efficient dc Electrical Power Generation
J. M. Wun1、J. W. Shi1、C. Y. Tsai1、Y. M. Hsin1(1.Univ. of National Central Univ. , Taiwan)
[A-6-6]Waveguide Based Photonic-Transmitter-Mixer at W-band for Photonic Generation of Few-cycle Millimeter-Wave Pulses
J. M. Wun1、J. W. Shi1(1.National Central Univ. , Taiwan)
[A-7-1]Monolithically Integrated 16x10-Gb/s WDM Receiver on a Silicon-Silica-Germanium Photonic Platform
T. Hiraki1,2、R. Kou1,2、H. Nishi1,2、H. Fukuda1,2、T. Tsuchizawa1,2、Y. Ishikawa3、K. Wada3、K. Yamada1,2(1.NTT Microsystem Integration Labs.、2.Nanophotonics Center, NTT Corp. , Japan、3.Univ. of Tokyo , Japna)
[A-7-2]P-I-N Ge on Si photodiodes for high speed and low power consumption receivers
L. Virot1,2,3、L. Vivien1、J. M. Hartmann2、J. M. Fedeli2、D. Marris Morini1、E. Cassan1、C. Baudot3、F. Boeuf3(1.Univ. Paris-Sud、2.CEA LETI、3.STMicroelectronics , France)
[A-7-3]45 GHz Bandwidth of Si Waveguide-Integrated PIN Ge Photodiode,and its Zero-Bias Voltage Operation
J. Fujikata1,2、M. Noguchi1,2、M. Miura1,2、D. Okamoto1,2、T. Horikawa1,3、Y. Arakawa1,4(1.PECST、2.PETRA、3.AIST、4.Univ. of Tokyo , Japan)
[A-7-4]Infrared Absorption of N-type Tensile-Strained Ge-on-Si
X. Wang1、H. Li1、R. Camacho2、Y. Cai2、L. C. Kimerling2、M. Jurgen2、J. Liu1(1.Dartmouth College、2.Massachusetts Inst. of Tech. , USA)
[A-7-5]Ge Selective Growth in Micron and Submicron Trenches with UHV-CVD
Y. Mizuno1、Y. Ishikawa1、K. Wada1(1.Univ. of Tokyo , Japan)
[A-7-6]SiGe Quantum Dots on Si Pillars for Visible Photodetection
W. T. Lai1、P. H. Liao1、A. Homyk2、A. Scherer2、P. W. Li1(1.National Central Univ. , Taiwan、2.California Inst. of Tech. , USA)
[B-1-1]Overview and Future Challenge of High Density DRAM for 20nm and beyond
Y. Hwang1、J. Park1、G. Y. Jin1、C. Chung1(1.Samsung Electronics Co., Ltd. , Korea)
[B-1-2]Novel Field Effect Diode type Vertical Capacitorless 1T-DRAM Cell with Negative Hold Bit Line Bias Scheme for Improving the Hold Characteristics
T. Imamoto1,2、T. Endoh1,2(1.Tohoku Univ.、2.JST-CREST , Japan)
[B-1-3]Multi-Level Cell Memory with High-Speed, Low-Voltage Writing and High Endurance Using Crystalline In-Ga-Zn Oxide Thin Film Transistor
T. Ishizu1、H. Inoue1、T. Matsuzaki1、S. Nagatsuka1、Y. Okazaki1、T. Onuki1、A. Isobe1、Y. Shionoiri1、K. Kato1、T. Okuda1、J. Koyama1、S. Yamazaki1(1.Semiconductor Energy Laboratory Co., Ltd. , Japan)
[B-2-1]New erase verify scheme for improving the cycling endurance of 2xnm NAND flash cell
J. Kim1、T. Youn1、S. Seo1、N. Park1、S. Yi1、E. Park1、H. Kim1、H. Yang1、K. Noh1、S. Park1、S. Lee1(1.SK hynix Inc. , South Korea)
[B-2-2]Characterization RTN(Random Telegraph Noise) Generated by Process and Cycling Stress Induced Traps in 26nm NAND Flash Memory
B. S. Jo1、H. J. Kang1、S. M. Joe1、M. K. Jeong1、S. K. Park2、K. R. Han2、B. G. Park1、J. H. Lee1(1.Seoul National Univ.、2.SK Hynix Inc. , Korea)
[B-2-3]Single-Poly Flash Memory with Degradation-Separated Scheme
H. W. H. Ching1、W. Robert1、Y. Kevin1、L. Yen Hsin1、B. Francis1、C. Hsin Ming1、Y. Evans1(1.eMemory Tech. Inc. , Taiwan)
[B-2-4]A Ultra-low-voltage operation on Ultra-thin poly-Si p-channel Flash Memory with Silicon Nanocrystals
H. B. Chen1、S. H. Lin2、J. J. Wu1、Y. C. Wu2、C. Y. Chang1(1.Univ. of National Chiao Tung Univ.、2.Univ. of National Tsing Hua Univ. , Taiwan)
[B-2-5L]Exploring Trapped Charge Evolution in P-Channel SONOS Memory Device
F. H. Li1、Y. Y. Chiu1、Y. H. Lee1、R. W. Chang1、B. J. Yang1、W. T. Sun2、E. Lee2、C. W. Kuo2、R. Shirota1(1.National Chiao Tung Univ.、2.eMemory Tech. Inc. , Taiwan)
[B-3-1]A Process Tech. and Characterization for 20nm PRAM
B. Kim1、Y. Song1、H. Jeong1、D. Ha1、Y. Kang1、S. Ahn1、J. Lee1、K. Lee1、D. Ahn1、S. Nam1、G. Jeong1、C. Chung1(1.Samsung Electronics Corp. , Korea)
[B-3-2]Novel 2-bit Multi-level PCRAM Structure with a Triple-layered Phase Change Material Stack for High-density Storage Applications
A. Gyanathan1、Y. C. Yeo1(1.National Univ. of Singapore , Singapore)
[B-3-3]Squarness Control in Polarization-electric filed Curves in Rhombohedral PZT Films
H. Funakubo1、A. Sumi1、H. Morioka1、S. Okamoto1、S. Yokoyama1、T. Okamoto1、Y. Ehara1(1.Tokyo Tech. , Japan)
[B-4-1]Ultra-Low Power Devices by Taking Advantages of Atom Switches with Polymer Solid-electrolyte
H. Hada1、T. Sakamoto1、M. Tada1、N. Banno1、M. Miyamura1、K. Okamoto1、N. Iguchi1、T. Nohisa1(1.Low-power Electronics Association & Project , Japan)
[B-4-2]Effect of the active layer thickness and temperature on the switching kinetics of GeS2-based Conductive Bridge Memories
G. Palma1、E. Vianello1、G. Molas1、C. Cagli1、F. Longnos2、J. Guy1、M. Reyboz1、C. Carabasse1、M. Bernard1、F. Dahmani2、D. Bretegnier2、J. Liebault2、B. De Salvo1(1.CEA, LETI, MINATEC Campus、2.Altis Semiconductor , France)
[B-4-3]Optimization of Conductive Filament of Oxide-based RRAM for Low Operation Current by Stochastic Simulation
P. Huang1、Y. X. Deng1、B. Gao1、B. Chen1、F. F. Zhang1、D. Y1、L. F. Liu1、G. Du1、J. F. Kang1、X. Y. Liu1(1.Peking Univ. , P. R. China)
[B-5-1]Switching Model of TaOx-based Non-polar Resistive Random Access Memory
X. Tong1、W. Wu1、Z. Liu1、X. A. Tran2、H. Y. Yu3、Y. C. Yeo1(1.National Univ. of Singapore、2.Nanyang Tech. Univ. , Singapore、3.South Univ. of Sci. and Tech. , China)
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