2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan
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International Conference on Solid State Devices and Materials
2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan

[A-2-5]Mixture formaion of ErxYb2-xSi2O7 and ErxYb2-xO3 for broadening the C - band in an optical amplifier on Si

H. Omi1,2、Y. Abe1、M. Anagnosti1、T. Tawara1,2(1.NTT Basic Research Labs., NTT Corp、2.Nanophotonics Center, NTT Corp. , Japan)
https://doi.org/10.7567/SSDM.2012.A-2-5
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