2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan
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International Conference on Solid State Devices and Materials
2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan

[A-6-4]GaAs/AlAs multilayer cavity with Er-doped InAs quantum dots embedded in extremely thin strain-relaxed InGaAs barriers for ultrafast all-optical switches

K. Morita1、H. Ueyama1、Y. Yasunaga1、Y. Nakagawa1,2、T. Kitada1、T. Isu1(1.Univ. of Tokushima、2.NICHIA Corp. , Japan)
https://doi.org/10.7567/SSDM.2012.A-6-4
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