2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan
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International Conference on Solid State Devices and Materials
2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan

[B-1-2]Novel Field Effect Diode type Vertical Capacitorless 1T-DRAM Cell with Negative Hold Bit Line Bias Scheme for Improving the Hold Characteristics

T. Imamoto1,2、T. Endoh1,2(1.Tohoku Univ.、2.JST-CREST , Japan)
https://doi.org/10.7567/SSDM.2012.B-1-2
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