2012 International Conference on Solid State Devices and Materials
2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan
2012 International Conference on Solid State Devices and Materials
2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan
[B-1-3]Multi-Level Cell Memory with High-Speed, Low-Voltage Writing and High Endurance Using Crystalline In-Ga-Zn Oxide Thin Film Transistor
T. Ishizu1、H. Inoue1、T. Matsuzaki1、S. Nagatsuka1、Y. Okazaki1、T. Onuki1、A. Isobe1、Y. Shionoiri1、K. Kato1、T. Okuda1、J. Koyama1、S. Yamazaki1(1.Semiconductor Energy Laboratory Co., Ltd. , Japan)
