2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan
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International Conference on Solid State Devices and Materials
2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan

[B-2-1]New erase verify scheme for improving the cycling endurance of 2xnm NAND flash cell

J. Kim1、T. Youn1、S. Seo1、N. Park1、S. Yi1、E. Park1、H. Kim1、H. Yang1、K. Noh1、S. Park1、S. Lee1(1.SK hynix Inc. , South Korea)
https://doi.org/10.7567/SSDM.2012.B-2-1
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