2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan
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International Conference on Solid State Devices and Materials
2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan

[B-2-2]Characterization RTN(Random Telegraph Noise) Generated by Process and Cycling Stress Induced Traps in 26nm NAND Flash Memory

B. S. Jo1、H. J. Kang1、S. M. Joe1、M. K. Jeong1、S. K. Park2、K. R. Han2、B. G. Park1、J. H. Lee1(1.Seoul National Univ.、2.SK Hynix Inc. , Korea)
https://doi.org/10.7567/SSDM.2012.B-2-2
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