2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan
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International Conference on Solid State Devices and Materials
2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan

[B-4-2]Effect of the active layer thickness and temperature on the switching kinetics of GeS2-based Conductive Bridge Memories

G. Palma1、E. Vianello1、G. Molas1、C. Cagli1、F. Longnos2、J. Guy1、M. Reyboz1、C. Carabasse1、M. Bernard1、F. Dahmani2、D. Bretegnier2、J. Liebault2、B. De Salvo1(1.CEA, LETI, MINATEC Campus、2.Altis Semiconductor , France)
https://doi.org/10.7567/SSDM.2012.B-4-2
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