2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan
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International Conference on Solid State Devices and Materials
2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan

[B-4-3]Optimization of Conductive Filament of Oxide-based RRAM for Low Operation Current by Stochastic Simulation

P. Huang1、Y. X. Deng1、B. Gao1、B. Chen1、F. F. Zhang1、D. Y1、L. F. Liu1、G. Du1、J. F. Kang1、X. Y. Liu1(1.Peking Univ. , P. R. China)
https://doi.org/10.7567/SSDM.2012.B-4-3
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