2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan
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International Conference on Solid State Devices and Materials
2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜9月27日Kyoto International Conference Center, Kyoto, Japan

[B-5-1]Switching Model of TaOx-based Non-polar Resistive Random Access Memory

X. Tong1、W. Wu1、Z. Liu1、X. A. Tran2、H. Y. Yu3、Y. C. Yeo1(1.National Univ. of Singapore、2.Nanyang Tech. Univ. , Singapore、3.South Univ. of Sci. and Tech. , China)
https://doi.org/10.7567/SSDM.2012.B-5-1
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