2016 International Conference on Solid State Devices and Materials
2016年9月26日〜9月29日Tsukuba International Congress Center, Tsukuba, Japan
2016 International Conference on Solid State Devices and Materials
2016年9月26日〜9月29日Tsukuba International Congress Center, Tsukuba, Japan
[A-1-02(Invited)]Stackable MoS2 FinFETs Using Solid CVD Developed Through Fully CMOS-Compatible Process Technology
○M. Chen1, K. Li1, L. Li2, M. Li2,3, Y. Chang4, C. Lin1, Y. Chen1, C. Chen1, B. Wu1, C. Wu1, Y. Lee1, J. Shieh1, W. Yeh1, P. Su5, T. Wang5, F. Yang3, C. Hu6(1.National Nano Device Labs.(Taiwan), 2.King Abdullah Univ. of Sci. and Technology(Saudi Arabia), 3.Academia Sinica(Taiwan), 4.NCTU(Taiwan), 5.Dept. of Electronics Eng., NCTU(Taiwan), 6.Univ. of California, Berkeley(USA))
