[A-2-01(Invited)] Experimental Demonstration of Negative Capacitance epi-Ge/Si FETs with Ferroelectric Hf-based Oxide Gate Stack for Swing Sub-60mV/dec and Hysteresis-Free | 2016 International Conference on Solid State Devices and Materials

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜9月29日Tsukuba International Congress Center, Tsukuba, Japan

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2016 International Conference on Solid State Devices and Materials

2016年9月26日〜9月29日Tsukuba International Congress Center, Tsukuba, Japan

[A-2-01(Invited)]Experimental Demonstration of Negative Capacitance epi-Ge/Si FETs with Ferroelectric Hf-based Oxide Gate Stack for Swing Sub-60mV/dec and Hysteresis-Free

^○M. H. Lee¹, P. G. Chen^1,2, C. Liu³, K. T. Chen⁴, M. J. Xie¹, S. N. Liu¹, H. H. Chen¹, C. H. Tang¹, J. W. Lee¹, W. H. Tu², K. S. Li⁵, M. C. Chen⁵, M. H. Liao², C. Y. Chang^3,6, C. H. Cheng¹, S. T. Chang⁴, C. W. Liu²(1.National Taiwan Normal Univ.(Taiwan), 2.National Taiwan Univ.(Taiwan), 3.NCTU(Taiwan), 4.National Chung Hsing Univ.(Taiwan), 5.National Nano Device Lab.(Taiwan), 6.Academia Sinica(Taiwan))

https://doi.org/10.7567/SSDM.2016.A-2-01

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