2016 International Conference on Solid State Devices and Materials

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜9月29日Tsukuba International Congress Center, Tsukuba, Japan
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International Conference on Solid State Devices and Materials
2016 International Conference on Solid State Devices and Materials

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜9月29日Tsukuba International Congress Center, Tsukuba, Japan

[A-5-04]On the Characterization of Hot Carrier Effect in Fully Depleted SOI and GeOI MOSFETs under Circuit-Speed Random Stress

○R. Cheng1, W. Chen1, D. -W. Wang1, J. Lu2, R. Zhang1, W. -Y. Yin1, Y. Zhao1(1.Zhejiang Univ.(China), 2.Hunan Univ.(China))
https://doi.org/10.7567/SSDM.2016.A-5-04
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