2016 International Conference on Solid State Devices and Materials

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜9月29日Tsukuba International Congress Center, Tsukuba, Japan
International Conference on Solid State Devices and Materials
2016 International Conference on Solid State Devices and Materials

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜9月29日Tsukuba International Congress Center, Tsukuba, Japan

[B-1-03]A Sidewall Electrode TiOx/TiOxNy ReRAM with Excellent Memory Window Control and Reliability Using Plasma Oxidation and a Novel Degradation-detecting Writing Algorithm

D. Lee1, J. Wu1, M. Lee1, E. Lai1, W. Khwa1, Y. Lin1, W. Chen1, K. Chiang1, T. Wang1, S. Horng2, J. Gong2, H. Lung1, K. Hsieh1, C. Lu1(1.Macronix International Co., Ltd.(Taiwan), 2.National Tsing Hua Univ.(Taiwan))
https://doi.org/10.7567/SSDM.2016.B-1-03