2016 International Conference on Solid State Devices and Materials
2016年9月26日〜9月29日Tsukuba International Congress Center, Tsukuba, Japan
2016 International Conference on Solid State Devices and Materials
2016年9月26日〜9月29日Tsukuba International Congress Center, Tsukuba, Japan
[B-1-04]Switching Mechanism in Resistive Random Access Memory by First-Principles Calculation Using Practical Model Based on Experimental Results
○T. Moriyama1, T. Yamasaki2, S. Hida1, T. Ohno2,3, S. Kishida1,4, K. Kinoshita1,4(1.Tottori Univ.(Japan), 2.NIMS(Japan), 3.Univ. of Tokyo(Japan), 4.Tottori Integrated Frontier Res. Center(Japan))
