2016 International Conference on Solid State Devices and Materials

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜9月29日Tsukuba International Congress Center, Tsukuba, Japan
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International Conference on Solid State Devices and Materials
2016 International Conference on Solid State Devices and Materials

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜9月29日Tsukuba International Congress Center, Tsukuba, Japan

[B-3-05]Multi-level Operation of a High-speed, Low Power Topological Switching Random-access Memory (TRAM) Based on a Ge Deficient GexTe/Sb2Te3 Superlattice

○H. Shirakawa1, M. Takato1, M. Araidai1,2, T. Ohyanagi3, N. Takaura3, K. Shiraishi1(1.Nagoya Univ.(Japan), 2.JST-CREST(Japan), 3.Hitachi, Ltd.(Japan))
https://doi.org/10.7567/SSDM.2016.B-3-05
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