2017 International Conference on Solid State Devices and Materials

2017 International Conference on Solid State Devices and Materials

2017年9月19日〜9月22日Sendai International Center
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International Conference on Solid State Devices and Materials
2017 International Conference on Solid State Devices and Materials

2017 International Conference on Solid State Devices and Materials

2017年9月19日〜9月22日Sendai International Center

[A-5-03]Cross Point Type 1T-1MTJ STT-MRAM Cell with 60 nm Multi-pillar Vertical Body Channel MOSFET under 55 nm p-MTJ and Its Beyond for High Density STT-MRAM

○T. Sasaki1,2,3, T. Endoh1,2,3(1.Tohoku Univ. (Japan), 2.ACCEL, JST (Japan), 3.OPERA, JST (Japan))
https://doi.org/10.7567/SSDM.2017.A-5-03
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