2017 International Conference on Solid State Devices and Materials

^○K. Aoshima¹, H. Kinjo¹, D. Kato¹, N. Funabashi¹, S. Aso¹, K. Machida¹, K. Kuga¹, T. Mishina¹, T. Ishibashi², H. Kikuchi¹(1.NHK Japan Broadcasting Corp. (Japan), 2.Nagaoka Univ. of Tech. (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[A-1-03]Ultra-compact Circular Polarized Metal/GaN Double-Spiral Cavity Lasers

^○C. A. Lin¹, S. W. Liao¹, Y. H. Hsiao¹, C. L. Yu¹, H. C. Kuo¹, M. H. Shih²(1.National Chiao Tung Univ. (Taiwan), 2.RCAS, Academia Sinica (Taiwan))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[A-1-04 (Invited)]Functional Oxides for Photonics

^○J. Fompeyrine¹, F. Eltes¹, S. Abel¹(1.IBM Research - Zurich (Switzerland))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[A-2-01 (Invited)]Magnetic Skyrmions in Confined Geometries

H. Du^1,2, C. Jin¹, X. Wang³, R. Che³,^○M. Tian^1,2(1.Chinese Academy of Sci. (China), 2.Anhui Univ. (China), 3.Fudan Univ. (China))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[A-2-02]Determination of Dzyaloshinskii-Moriya Interaction Energy by Extended Droplet Model

^○S. Kim¹, P. -H. Jang², D. -H. Kim¹, M. Ishibashi¹, T. Taniguchi¹, T. Moriyama¹, K. -J. Kim^3,1, K. -J. Lee², T. Ono¹(1.Kyoto Univ. (Japan), 2.Korea Univ. (Korea), 3.KAIST (Korea))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[A-2-03]Spin Orbit Torques in Heavy-Metal/Ferromagnet/Normal-Metal Trilayers

^○Y. Du^1,2, Y. -C. Lau^1,3, J. Nitta², M. Hayashi^1,3(1.Nat'l. Inst. for Mater. Sci. (Japan), 2.Tohoku Univ. (Japan), 3.Univ. of Tokyo (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[A-2-04]Device Size Dependence of Spin-orbit Torque Induced Magnetization Switching in W/CoFeB/MgO

^○C. Zhang¹, S. Fukami¹, S. DuttaGupta¹, H. Sato¹, H. Ohno¹(1.Tohoku Univ. (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[A-2-05]Detection of heating effect due to magneto-static surface spin wave in CoFeB film

^○K. Yamanoi¹, T. Kimura¹(1.Kyushu Univ. (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[A-2-06]Current Density Dependence of Asymmetric Magnetoresistance in Pt/Py Bilayers Under Various Magnetic Field Strength

^○T. Li¹, S. Kim¹, S. -J. Lee², S. -W. Lee², T. Koyama³, D. Chiba³, T. Moriyama¹, K. -J. Lee², K. -J. Kim^1,4, T. Ono^1,5(1.Kyoto Univ. (Japan), 2.Korea Univ. (Korea), 3.Univ. of Tokyo (Japan), 4.KAIST (Korea), 5.Osaka Univ. (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[A-5-01 (Invited)]Accumulative Magnetic Switching of Ultrahigh-Density Recording Media by Circularly Polarized Light

^○Y. K. Takahashi¹, R. Medapalli², S. Kasai¹, J. Wang¹, K. Ishioka¹, S. H. Wee³, O. Hellwig⁴, K. Hono¹, E. E. Fullerton²(1.NIMS (Japan), 2.UCSD (USA), 3.HGST (USA), 4.Institut für Ionenstrahlphysik und Materialforschung (Germany))

2017 International Conference on Solid State Devices and Materials2017年9月22日(金)

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[A-5-02]Switching Mechanism Design for High-speed Voltage-Control Spintronics Memory (VoCSM) Considering the Operation Window

^○K. Koi¹, H. Yoda¹, N. Shimomura¹, T. Inokuchi¹, Y. Kato¹, B. Altansargai¹, S. Shirotori¹, Y. Kamiguchi¹, K. Ikegami¹, S. Oikawa¹, H. Sugiyama¹, M. Shimizu¹, M. Ishikawa¹, T. Ajay¹, Y. Ohsawa¹, Y. Saito¹, A. Kurobe¹(1.Toshiba Corp. (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月22日(金)

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[A-5-03]Cross Point Type 1T-1MTJ STT-MRAM Cell with 60 nm Multi-pillar Vertical Body Channel MOSFET under 55 nm p-MTJ and Its Beyond for High Density STT-MRAM

^○T. Sasaki^1,2,3, T. Endoh^1,2,3(1.Tohoku Univ. (Japan), 2.ACCEL, JST (Japan), 3.OPERA, JST (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月22日(金)

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[A-5-04 (Invited)]Key advanced technology for eMRAM development

^○J. Lee¹, H. Jung¹, K. Lee¹, Y. Song¹, G. -H. Koh¹, G. -T. Jeong(1.Samsung Electronics Co., Ltd. (Korea))

2017 International Conference on Solid State Devices and Materials2017年9月22日(金)

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[A-6-01]Voltage-Control Spintronics Memory (VoCSM) having a potential of high write-efficiency

^○M. Shimizu¹, H. Yoda¹, S. Shirotori¹, N. Shimomura¹, Y. Ohsawa¹, T. Inokuchi¹, K. Koui¹, Y. Kato¹, S. Oikawa¹, H. Sugiyama¹, A. Buyandalai¹, M. Ishikawa¹, K. Ikegami¹, Y. Kamiguchi¹, Y. Saito¹, A. Kurobe¹(1.Toshiba Corp. (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月22日(金)

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[A-6-02]Sub 1 V 60 nm Vertical Body Channel MOSFET Based 6T SRAM Array with Wide Noise Margin and Excellent Power Delay Product

^○R. Ogasawara^1,2,3, T. Endoh^1,2,3(1.Tohoku Univ. (Japan), 2.ACCEL, JST (Japan), 3.OPERA, JST (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月22日(金)

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[A-6-03]In-situ Observation of Cu Residuals in Resistance Switching Failure of MoO_x/Al₂O₃ CBRAM

^○M. Arita¹, R. Ishikawa¹, S. Hirata¹, A. Turumaki-Fukuchi¹, Y. Takahashi¹(1.Hokkaido Univ. (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月22日(金)

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[A-7-01]The Experimental Observations of a New Dielectric-fuse Breakdown in a Bilayer-RRAM to Realize the OTP Functionality

^○E. R. Hsieh¹, H. W. Cheng¹, Z. H. Huang¹, C. H. Chuang¹, C. H. Chen¹, S. Chung¹(1.National Chiao Tung Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials2017年9月22日(金)

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[A-7-02]A Novel Ternary Content Addressable Memory Design Based on RRAM with High Intensity and Low Search Energy

^○R. Han¹, W. Shen¹, P. Huang¹, Z. Zhou¹, L. Liu¹, X. Liu¹, J. Kang¹(1.Peking Univ. (China))

2017 International Conference on Solid State Devices and Materials2017年9月22日(金)

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[A-7-03]Error Free Physically Unclonable Function (PUF) with Programmed ReRAM using Reliable Resistance States by Novel ID-Generation Method

^○P. H. Tseng¹(1.Macronix International Co., Ltd. (Taiwan))

2017 International Conference on Solid State Devices and Materials2017年9月22日(金)

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[A-7-04]Highly Reliable Logic-Compatible MTP Memory for Automotive Applications

^○C. Y. Lo¹, S. C. Wang¹(1.eMemory Technology Inc. (Taiwan))

2017 International Conference on Solid State Devices and Materials2017年9月22日(金)

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[A-8-01 (Invited)]Transition Metal-Ge-Te Chalcogenides for PCRAM Material

^○Y. Sutou¹, S. Shindo¹, S. Hatayama¹, Y. Saito², J. Koike¹(1.Tohoku Univ. (Japan), 2.AIST (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月22日(金)

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[A-8-02]Origin of the difference between high resistive and low resistive structures for interfacial phase change memories based on GeTe/Sb₂Te₃ superlattice

^○H. Shirakawa¹, M. Araidai¹, K. Shiraishi¹(1.Nagoya Univ. (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月22日(金)

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[A-8-03]Thermal Stability and Switching Performance of iPCM at Elevated Temperature

^○K. V. Mitrofanov¹, Y. Saito¹, N. Miyata¹, P. Fons¹, A. V. Kolobov¹, J. Tominaga¹(1.AIST (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月22日(金)

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[A-8-04]Continuous Multilevel Compact Model of Subthreshold Conduction and Threshold Switching in Phase-Change Memory

^○C. Pigot^1,2,3, F. Gilibert¹, M. Reyboz², M. Bocquet³, P. Zuliani⁴, J. -M. Portal³(1.STMicroelectronics, Crolles (France), 2.CEA-Leti (France), 3.IM2NP, Aix-Marseille Univ. (France), 4.STMicroelectronics, Agrate (Italy))

2017 International Conference on Solid State Devices and Materials2017年9月22日(金)

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[A-8-05 (Late News)]Programming Current Reduction in GeS₂+Sb₂Te₃ Based Phase-Change Memory

^○J. Kluge^1,2,3, A. Verdy², G. Navarro², S. Blonkowski¹, V. Sousa², P. Kowalczyk², M. Bernard², N. Bernier², G. Bourgeois², N. Castellani², P. Noé², E. Nowak², L. Perniola²(1.STMicroelectronics (France), 2.CEA-Leti (France), 3.IMEP-LAHC (France))

2017 International Conference on Solid State Devices and Materials2017年9月22日(金)

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[B-1-01 (Invited)]Significant Lifetime Enhancement of Organic Light Emitting Diodes by Removing Residual Water during Device Fabrication

^○H. Murata¹, L. C. Duy¹, S. Oyama¹, H. Sakai¹(1.JAIST (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[B-1-02]Introducing optical resonators into polymer light-emitting electrochemical cells

^○T. Zhang¹, T. Sakanoue¹, T. Takenobu¹(1.Nagoya Univ. (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[B-1-03]Single-Crystal Perovskite CH₃NH₃PbBr₃ Prepared by Cast-capping Method for Light-Emitting Diodes

^○V. -C. Nguyen¹, H. Katsuki¹, F. Sasaki², H. Yanagi¹(1.NAIST (Japan), 2.AIST (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[B-1-04 (Late News)]Compression of Organic Thin-films by Cold Isostatic Pressing for Enhanced Device Properties

^○Y. Esaki¹, T. Matsushima^1,2,3, C. Adachi^1,2,3(1.Kyushu Univ. (Japan), 2.JST ERATO (Japan), 3.WPI-I2CNER (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[B-1-05]Photo-responsible polarization switching in TiOPc/P (VDF–TrFE) stacking films

^○Y. Koshiba¹, H. Horii¹, M. Morimoto^1,2, M. Misaki^1,3, T. Fukushima¹, K. Ishida¹(1.Kobe Univ. (Japan), 2.Univ. of Toyama (Japan), 3.Kindai Univ. Tech. Col. (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[B-1-06]Shape changes of azobenzene particles induced by linearly polarized laser light

^○Y. Ohdaira¹, Y. Ikeda¹, H. Oka¹, K. Shinbo¹(1.Niigata Univ. (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[B-2-01 (Invited)]Flexible Printed Organic TFT Devices and Potential Applications

^○S. Tokito¹(1.Yamagata Univ. (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[B-2-02]Temperature Dependence of Transport Properties in dinaphtho[2,3-b:2’,3’-d] thiophene Thin-Film Transistors with MoO₃/Au Electrodes

S. Shaari^1,2, S. Naka¹,^○H. Okada¹(1.Univ. of Toyama (Japan), 2.Univ. Malaysia Perlis (Malaysia))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[B-2-03]Studies on correlation of surface and electrical properties in pentacene and thienoacene-based organic thin film transistors

S. Sharri^1,2, S. Naka¹,^○H. Okada¹(1.Univ. of Toyama (Japan), 2.Univ. Malaysia Perlis (Malaysia))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[B-2-04]Influence of Surface Treatment of SiO₂ Gate Insulator for Pentacene-based OFETs with Nitrogen-doped LaB₆ Bottom-Contact Electrode Formation Process

^○Y. Maeda¹, M. Hiroki¹, S. Ohmi¹(1.Tokyo Tech (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[B-2-05]Crystal Structure Analyses of Organic Semiconductor Thin Films with Variable-Temperature Two-Dimensional Grazing Incidence X-ray Diffraction

^○R. Abe¹, H. Kojima¹, M. Kikuchi², T. Watanabe³, T. Koganezawa³, N. Yoshimoto², I. Hirosawa³, M. Nakamura¹(1.NAIST (Japan), 2.Iwate Univ. (Japan), 3.Japan Synchrotron Radiation Research Institute (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[B-2-06]Temperature Dependence of Carrier Mobility on Non-Peripherally Octahexyl-Substituted Copper Phthalocyanine

^○Ken Watanabe¹, Koichi Watanabe¹, N. Tohnai¹, A. Fujii¹, M. Ozaki¹(1.Osaka Univ. (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月20日(水)

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[B-3-01 (Invited)]Fundamentals and Applications of Nano-molecular devices

^○N. Clement¹(1.NTT Basic Res. Labs. (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月21日(木)

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[B-3-02]Electron Injection on Metal/n-doped Polymer Semiconductor

^○S. Sakiyama¹, A. Yasukochi¹, T. Iwashita¹, K. Fujita¹(1.Kyushu Univ. (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月21日(木)

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[B-3-03]Precipitation of thin film organic single crystals by a novel crystal growth method using electrospray and ionic liquid layer

^○H. Ueda¹, K. Takeuchi¹, A. Kikuchi^1,2(1.Sophia Univ. (Japan), 2.Sophia Nanotechnology Research Center (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月21日(木)

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[B-3-04]Theoretical Studies of π-Conjugate Molecules Embedded in hexagonal boron nitride

W. Xie¹, T. Tamura¹, T. Yanase¹, T. Nagahama¹,^○T. Shimada¹(1.Hokkaido Univ. (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月21日(木)

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[B-3-05]A Design-analysis Flow Considering Mechanical Stability of Metal Masks for Organic CMOS Circuits

^○M. Shintani¹, K. Kuribara², Y. Ogasahara², M. Hiromoto¹, T. Sato¹(1.Kyoto Univ. (Japan), 2.AIST (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月21日(木)

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[B-3-06]Dimer Formation of Pentacene by Heated Tungsten

^○A. Heya¹, N. Matsuo¹(1.Univ. of Hyogo (Japan))

2017 International Conference on Solid State Devices and Materials2017年9月21日(木)

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[B-4-01 (Invited)]The Excitonics in Photonic Colloidal Nanostructures and Devices

H. Lee¹, Y. Kim¹,^○S. Lee¹(1.Seoul National Univ. (Korea))

2017 International Conference on Solid State Devices and Materials2017年9月21日(木)

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