2017 International Conference on Solid State Devices and Materials

2017 International Conference on Solid State Devices and Materials

2017年9月19日〜9月22日Sendai International Center
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International Conference on Solid State Devices and Materials
2017 International Conference on Solid State Devices and Materials

2017 International Conference on Solid State Devices and Materials

2017年9月19日〜9月22日Sendai International Center

[A-6-02]Sub 1 V 60 nm Vertical Body Channel MOSFET Based 6T SRAM Array with Wide Noise Margin and Excellent Power Delay Product

○R. Ogasawara1,2,3, T. Endoh1,2,3(1.Tohoku Univ. (Japan), 2.ACCEL, JST (Japan), 3.OPERA, JST (Japan))
https://doi.org/10.7567/SSDM.2017.A-6-02
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