2017 International Conference on Solid State Devices and Materials

2017 International Conference on Solid State Devices and Materials

2017年9月19日〜9月22日Sendai International Center
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International Conference on Solid State Devices and Materials
2017 International Conference on Solid State Devices and Materials

2017 International Conference on Solid State Devices and Materials

2017年9月19日〜9月22日Sendai International Center

[A-7-02]A Novel Ternary Content Addressable Memory Design Based on RRAM with High Intensity and Low Search Energy

○R. Han1, W. Shen1, P. Huang1, Z. Zhou1, L. Liu1, X. Liu1, J. Kang1(1.Peking Univ. (China))
https://doi.org/10.7567/SSDM.2017.A-7-02
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