2017 International Conference on Solid State Devices and Materials

2017 International Conference on Solid State Devices and Materials

2017年9月19日〜9月22日Sendai International Center
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International Conference on Solid State Devices and Materials
2017 International Conference on Solid State Devices and Materials

2017 International Conference on Solid State Devices and Materials

2017年9月19日〜9月22日Sendai International Center

[A-8-02]Origin of the difference between high resistive and low resistive structures for interfacial phase change memories based on GeTe/Sb2Te3 superlattice

○H. Shirakawa1, M. Araidai1, K. Shiraishi1(1.Nagoya Univ. (Japan))
https://doi.org/10.7567/SSDM.2017.A-8-02
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