2017 International Conference on Solid State Devices and Materials

2017 International Conference on Solid State Devices and Materials

2017年9月19日〜9月22日Sendai International Center
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International Conference on Solid State Devices and Materials
2017 International Conference on Solid State Devices and Materials

2017 International Conference on Solid State Devices and Materials

2017年9月19日〜9月22日Sendai International Center

[A-8-05 (Late News)]Programming Current Reduction in GeS2+Sb2Te3 Based Phase-Change Memory

○J. Kluge1,2,3, A. Verdy2, G. Navarro2, S. Blonkowski1, V. Sousa2, P. Kowalczyk2, M. Bernard2, N. Bernier2, G. Bourgeois2, N. Castellani2, P. Noé2, E. Nowak2, L. Perniola2(1.STMicroelectronics (France), 2.CEA-Leti (France), 3.IMEP-LAHC (France))
https://doi.org/10.7567/SSDM.2017.A-8-05
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