2017 International Conference on Solid State Devices and Materials

2017 International Conference on Solid State Devices and Materials

2017年9月19日〜9月22日Sendai International Center
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International Conference on Solid State Devices and Materials
2017 International Conference on Solid State Devices and Materials

2017 International Conference on Solid State Devices and Materials

2017年9月19日〜9月22日Sendai International Center

[B-2-04]Influence of Surface Treatment of SiO2 Gate Insulator for Pentacene-based OFETs with Nitrogen-doped LaB6 Bottom-Contact Electrode Formation Process

○Y. Maeda1, M. Hiroki1, S. Ohmi1(1.Tokyo Tech (Japan))
https://doi.org/10.7567/SSDM.2017.B-2-04
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