2018 International Conference on Solid State Devices and Materials

2018 International Conference on Solid State Devices and Materials

2018年9月9日〜9月13日University of Tokyo
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International Conference on Solid State Devices and Materials
2018 International Conference on Solid State Devices and Materials

2018 International Conference on Solid State Devices and Materials

2018年9月9日〜9月13日University of Tokyo

[A-1-04]Nearly ideal spin tunneling efficiency by lowering the trap density at an amorphous-MgO / n+-Si(001) interface with a SiO x insertion layer

○M. Ichihara1, S. Sato1, M. Tanaka1, R. Nakane1(1.Univ. of Tokyo (Japan))
https://doi.org/10.7567/SSDM.2018.A-1-04
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