International Conference on Solid State Devices and Materials

2018 International Conference on Solid State Devices and Materials

2018年9月9日〜9月13日University of Tokyo

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International Conference on Solid State Devices and Materials

2018 International Conference on Solid State Devices and Materials

2018年9月9日〜9月13日University of Tokyo

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[OP]Welcome Address

A. Toriumi(General Chair, Organizing Committee)

2018 International Conference on Solid State Devices and Materials2018年9月11日(火)

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[OP]Welcome Address

S. Zaima(President, The Japan Society of Applied Physics)

2018 International Conference on Solid State Devices and Materials2018年9月11日(火)

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[PL-01 (Plenary)]A mathematical challenge to a new phase of materials science

M. Kotani(Tohoku Univ. (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月11日(火)

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[AW]SSDM Award/SSDM Paper Award/SSDM Young Researcher Award Ceremony

2018 International Conference on Solid State Devices and Materials2018年9月11日(火)

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[PL-02 (Plenary)]Exploration of Materials and Devices for Beyond CMOS Technology for Computing

I. Young(Intel Corp. (USA))

2018 International Conference on Solid State Devices and Materials2018年9月11日(火)

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[PL-03 (Plenary)]Skin-Inspired Electronics

Z. Bao(Stanford Univ. (USA))

2018 International Conference on Solid State Devices and Materials2018年9月11日(火)

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[A-1-01 (Invited)]Spintronics in 2D Materials

^○R. Kawakami¹(1.The Ohio State Univ. (USA))

2018 International Conference on Solid State Devices and Materials2018年9月11日(火)

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[A-1-02]Spin tunneling into Si measured by three-terminal Hanle signals in vertical and lateral Si devices with Fe/Mg/MgO/Si tunnel junctions

^○S. Sato¹, R. Nakane^2,1, T. Hada¹, M. Ichihara¹, M. Tanaka^1,3(1.EEIS, Univ. of Tokyo (Japan), 2.IIIEE, Univ. of Tokyo (Japan), 3.CSRN, Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月11日(火)

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[A-1-03]Temperature Dependence of Nonlocal Spin Transport in Si<100> Lateral Spin-Valve Devices

^○M. Ishikawa^1,2, M. Tsukahara¹, M. Yamada¹, Y. Fujita¹, K. Hamaya^1,3(1.Osaka Univ. (Japan), 2.Toshiba Corp. (Japan), 3.Center for Spintronics Research Network (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月11日(火)

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[A-1-04]Nearly ideal spin tunneling efficiency by lowering the trap density at an amorphous-MgO / n⁺-Si(001) interface with a SiO _x insertion layer

^○M. Ichihara¹, S. Sato¹, M. Tanaka¹, R. Nakane¹(1.Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月11日(火)

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[A-2-01 (Invited)]Ultralow-Power and Compact Nonvolatile Brain-Inspired VLSIs Based on CMOS/MTJ Hybrid Technology

^○T. Endoh¹, Y. Ma¹(1.Tohoku Univ. (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月11日(火)

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[A-2-02 (Invited)]Saving Energy Consumption of Memory Systems by Voltage-Control Spintronics Memory (VoCSM)

^○H. Yoda¹, Y. Ohsawa¹, Y. Kato¹, N. Shimomura¹, M. Shimizu¹, K. Koi¹, S. Shirotori¹, T. Inokuchi¹, H. Sugiyama¹, S. Oikawa¹, B. Altansargai¹, A. Kurobe¹(1.Toshiba Corp. (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月11日(火)

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[A-2-03 (Invited)]Using (emerging) memories for machine learning hardware

^○D. Verkest¹, D. Rodopoulos¹, B. Verhoef¹, A. Mallik¹, J. Constantin¹, P. Debacker¹, J. Stuijt², R. Appeltans¹, D. Garbin¹, A. Mocuta¹, G.S. Kar¹, A. Furnemont¹(1.IMEC (Belgium), 2.IMEC-NL (The Netherlands))

2018 International Conference on Solid State Devices and Materials2018年9月11日(火)

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[A-2-04 (Late News)]Time-resolved Conductance in Electrochemical Systems for Neuromorphic Computing

^○D.M. Bishop¹, P. Solomon¹, S. Kim¹, J. Tang¹, J. Tersoff¹, T. Todorov¹, M. Copel¹, J. Collins¹, K.T. Lee¹, S. Shin¹, Wilfried Haensch¹, John Rozen¹(1.IBM Research (USA))

2018 International Conference on Solid State Devices and Materials2018年9月11日(火)

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[A-3-01]Study of Quantisation Accuracy Breakdown due to High Temperature and High Frequency in a Silicon Single-Electron Pump

^○N. Johnson¹, G. Yamahata¹, A. Fujiwara¹(1.NTT Basic Research Labs (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月12日(水)

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[A-3-02]Random-Telegraph-Noise and Wave-Particle Duality Found in a Silicon Nano-Wire

^○K. Ibukuro¹, L. Fayong¹, M.K. Husain¹, Z. Li¹, Y. Tsuchiya¹, H. Rutt¹, S. Saito¹(1.Univ. of Southampton (UK))

2018 International Conference on Solid State Devices and Materials2018年9月12日(水)

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[A-3-03]Fabrications and transport properties of SiGe self-assembled quantum dots

^○M. Tanaka¹, K. Kawaguchi¹, H. Kiyama¹, M. Bamesreiter², D. Bougeard², A. Oiwa¹(1.Osaka Univ. (Japan), 2.Univ. of Regensburg (Germany))

2018 International Conference on Solid State Devices and Materials2018年9月12日(水)

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[A-3-04]Size and Matrix-strain Effects on Ge Quantum Dots Light Emission

^○S.H. Chiu¹, C.W. Tien¹, S.D. Lin¹, W.H. Chang¹, H.C. Lin¹, P.W. Li¹(1.National Chiao Tung Univ. (Taiwan))

2018 International Conference on Solid State Devices and Materials2018年9月12日(水)

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[A-3-05]Room Temperature High Peak-to-valley Current Ratio of CaF₂/Si Triple-barrier Resonant-tunneling Diode Grown on Si

^○H. Tonegawa¹, Y. Kumagai¹, S. Fukuyama¹, K. Hirose¹, M. Watanabe¹(1.Tokyo Tech (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月12日(水)

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[A-3-06 (Late News)]Quantum Antidot with Fully and Partially Depleted Regions in the Quantum Hall Regime

^○H. Aramaki¹, R. Eguchi¹, E. Kamata¹, T. Fujisawa¹(1.Tokyo Tech (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月12日(水)

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[A-4-01 (Invited)]Microscopic Mechanism of the Electric-Field Effects on Spintronics Devices Elucidated by X-ray Magnetic Circular Dichroism Spectroscopy

^○M. Suzuki¹, M. Tsujikawa^2,3, T. Nozaki⁴, T. Nakamura¹, M. Shirai^2,3, S. Yuasa⁴, Y. Suzuki^5,6, S. Miwa^5,6,7(1.JASRI (Japan), 2.RIEC, Tohoku Univ. (Japan), 3.CSRN, Tohoku Univ. (Japan), 4.AIST, Spintronics Res. Center (Japan), 5.Osaka Univ. (Japan), 6.CSRN, Osaka Univ. (Japan), 7.ISSP, Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月12日(水)

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[A-4-02]Study of voltage-controlled magnetic anisotropy (VCMA) in a FeB thin film and a FeB/W multilayer by the Anomalous Hall effect

^○V. Zayets¹, T. Nozaki¹, A. Fukushima¹, H. Saito¹, S. Yuasa¹(1.AIST (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月12日(水)

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[A-4-03]N-type ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature: Electrical control of ferromagnetism

^○N.T. Tu^1,2, P.N. Hai^3,4, L.D. Anh¹, M. Tanaka^1,4(1.Univ. of Tokyo (Japan), 2.Univ. of Pedagogy HCMC (Viet Nam), 3.Tokyo Tech (Japan), 4.CSRN Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月12日(水)

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[A-4-04]Current-driven Switching of Antiferromagnets

^○C. Song¹, X. Chen¹, R. Zarzuela², J. Zhang³, W. Jiang¹, F. Pan¹, Y. Tserkovnyak²(1.Tsinghua Univ. (China), 2.UCLA (USA), 3.Huazhong Univ. of Sci. & Tech. (China))

2018 International Conference on Solid State Devices and Materials2018年9月12日(水)

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[A-5-01 (Invited)]Nonreciprocal Electronic Devices for Matter Waves

^○J. Mannhart¹, D. Braak¹(1.Max Planck Inst. for Solid State Res. (Germany))

2018 International Conference on Solid State Devices and Materials2018年9月12日(水)

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[A-5-02]Properties of Shallow Nitrogen Vacancy Centers in Nitrogen Terminated Diamond and Detection of Nuclear Magnetic Resonance

^○T. Sonoda¹, S. Kawai¹, H. Yamano¹, K. Kato¹, J.J. Buendia¹, T. Kageura¹, Y. Ishii¹, K. Nagaoka¹, R. Fukuda¹, T. Okada¹, M. Haruyama^2,3, T. Tanii¹, K. Yamada², S. Onoda², W. Kada³, O. Hanaizumi³, A. Stacey⁴, T. Teraji⁵, S. Kono⁷, J. Isoya⁶, H. Kawarada^1,7(1.Waseda Univ. (Japan), 2.QST (Japan), 3.Gunma Univ. (Japan), 4.Melbourne Univ. (Australia), 5.NIMS (Japan), 6.Univ. of Tsukuba (Japan), 7.Kagami Memorial Res. Inst. for Materials Sci. and Tech. (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月12日(水)

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[A-5-03]Superconducting Boron-doped Diamond Josephson Junction Operating above Liquid He Temperature, 4.2 K

^○S. Amano¹, T. Kageura¹, I. Tsuyuzaki¹, M. Tachiki², S. Oi², K. Hirata², S. Arisawa², H. Osato², D. Tsuya², Y. Takano², H. Kawarada^1,3(1.Waseda Univ. (Japan), 2.National Institute for Materials Science (Japan), 3.The Kagami Memorial Laboratory for Materials Science and Technology (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月12日(水)

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[A-5-04]New Operation Mode of VO₂-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching

^○T. Yajima¹, T. Nishimura¹, A. Toriumi¹(1.Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月12日(水)

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[A-5-05]Relaxation Oscillations in a Nonlinearly Driven GaAs MEMS Resonator

^○S. Houri¹, R. Ohta¹, M. Asano¹, Y.M. Blanter², H. Yamaguchi¹(1.NTT Basic Research Labs (Japan), 2.Delft University of Technology (Netherlands))

2018 International Conference on Solid State Devices and Materials2018年9月12日(水)

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[A-6-01 (Invited)]Skyrmions in magnetic multilayers: materials physics and device applications

^○W. Jiang¹(1.Tsinghua Univ. (China))

2018 International Conference on Solid State Devices and Materials2018年9月12日(水)

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[A-6-02]Spin Seebeck voltage enhancement by IrMn and Mn insertion at the interface between YIG and nonmagnetic layer

^○F. Nakata¹, T. Niimura¹, Y. Kurokawa¹, H. Yuasa^1,2(1.Kyushu Univ. (Japan), 2.JST PRESTO (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月12日(水)

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[A-6-03]Magnetic tunnel junctions with an equiatomic CoFeMnSi electrode

^○L. Bainsla¹, K. Suzuki^1,2, M. Tsujikawa^3,2, H. Tsuchiura^4,2, M. Shirai^3,2, S. Mizukami^1,2(1.AIMR, Tohoku Univ. (Japan), 2.CSRN, Tohoku Univ. (Japan), 3.RIEC, Tohoku Univ. (Japan), 4.Grad. Sch. Engn., Tohoku Univ. (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月12日(水)

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[A-6-04]Spin Wave and Phonon Excitation by the Magnetoelectric Effect

^○D. Tierno^1,2, T. Jost³, M. Geilen³, T. Brächer³, M. Heyns^1,2, B. Hillebrands³, I.P. Radu¹, P. Pirro³, F. Ciubotaru¹, C. Adelmann¹(1.imec (Belgium), 2.KU Leuven (Belgium), 3.TU Kaiserslautern (Germany))

2018 International Conference on Solid State Devices and Materials2018年9月12日(水)

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[A-7-01 (Invited)]Controlling spin-orbit interaction in scalable silicon-MOS quantum dot architectures

^○T. Tanttu¹, B. Hensen¹, K.W. Chan¹, H. Yang¹, W. Huang¹, M. Fogarty¹, D. Culcer^1,2, K. Itoh³, A. Laucht¹, A. Morello¹, A. Dzurak¹(1.The Univ. of New South Wales (Australia), 2.ARC Centre for Excellence in Future Low-Energy Electronics Technologies (Australia), 3.Keio Univ. (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月13日(木)

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[A-7-02]Control fidelities in isotopically natural and enriched silicon quantum dot qubits

^○K. Takeda¹, J. Yoneda¹, T. Otsuka^1,2,3, T. Nakajima¹, M. Delbecq^1,4, G. Allison¹, A. Noiri¹, Y. Hoshi⁵, N. Usami⁶, K. Itoh⁷, S. Oda⁸, T. Kodera⁹, S. Tarucha¹⁰(1.RIKEN, CEMS (Japan), 2.JST, PRESTO (Japan), 3.Tohoku Univ. (Japan), 4.LPA, Ecole Normale Supérieure-PSL Res. Univ. (France), 5.IIS, Univ. of Tokyo (Japan), 6.Nagoya Univ. (Japan), 7.Keio Univ. (Japan), 8.Dept. of Physical Electronics and Quantum Nanoelectronics Res. Center, Tokyo Tech (Japan), 9.Dept. of Electrical and Electronic Engineering, Tokyo Tech (Japan), 10.Dept. of Applied Physics, Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月13日(木)

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[A-7-03]Coherent oscillations of charge states in a Si single-electron pump at 4.2 K

^○G. Yamahata¹, S. Ryu², H.-S. Sim², N. Johnson¹, M. Kataoka³, A. Fujiwara¹(1.NTT Basic Res. Labs. (Japan), 2.KAIST (Korea), 3.National Physical Lab. (UK))

2018 International Conference on Solid State Devices and Materials2018年9月13日(木)

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[A-7-04]Optical Control of the Silicon–Vacancy Center in Diamond

^○M. Hanks^1,2, W.J. Munro^3,4,2, K. Nemoto^2,1(1.Sokendai (The Graduate Univ. for Advanced Studies) (Japan), 2.National Inst. of Informatics (Japan), 3.NTT Basic Res. Labs. (Japan), 4.NTT Res. Center for Theoretical Quantum Physics (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月13日(木)

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[A-7-05]Hybridization: A tool to engineer and probe novel quantum metamaterials

^○W. Munro^1,2,4, A. Angerer³, S. Putz³, T. Astner³, J. Schmiedmayer³, J. Majer^4,3, K. Nemoto⁴(1.NTT Basic Research Labs. (Japan), 2.Research Center for Theoretical Quantum Physics, NTT Corporation (Japan), 3.Vienna Center for Quantum Science and Technology, Atominstitut, TU Wien (Austria), 4.National Institute of Informatics (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月13日(木)

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[A-7-06]Qubit-resonator coupling system for quantum annealing

^○A. Tomonaga¹, H. Mukai¹, Y. Zhou², R. Wang¹, Y. Nakajima¹, J.S. Tsai^1,2(1.Dept. of Phys., Tokyo Univ. of Sci. (Japan), 2.CEMS, RIKEN (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月13日(木)

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[A-8-01]Enhancement of Spin-orbit Torque by CoO_x Layer Insertion into Co/Pt Interface

^○K. Hasegawa¹, Y. Hibino¹, M. Suzuki², T. Koyama¹, D. Chiba¹(1.Univ. of Tokyo (Japan), 2.JASRI (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月13日(木)

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[A-8-02]Observation of Spin-orbit torque generated by interface-generated spin current in a Py/Pt/Co system

^○Y. Hibino¹, T. Koyama¹, D. Chiba¹(1.Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月13日(木)

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[A-8-03]Enhancement of spin orbit interaction in nitrogen doped Cu thin films

^○R. Enoki¹, H. Gamou¹, S. Karube^1,2, M. Kohda^1,2, Y. Kunihashi³, H. Sanada³, J. Nitta^1,2(1.Tohoku Univ. (Japan), 2.CSRN Tohoku Univ. (Japan), 3.NTT-BRL (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月13日(木)

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[A-8-04]Observation of Spin-Orbit Torque Induced Magnetization Switching in Gd-Fe Perpendicular Magnetized Wire with In-Plane Exchange Bias Field

^○M. Wakae¹, Y. Kurokawa¹, H. Yuasa¹(1.Kyushu Univ. (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月13日(木)

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[A-8-05]Giant field-like torque observed in a Py/W/Pt trilayer system

^○S. Karube^1,2, N. Tezuka¹, M. Kohda^1,2, M. Matsuura¹, S. Sugimoto¹, J. Nitta^1,2(1.DepaNational Institute of Informatics, Tohoku Univ. (Japan), 2.Center for Spintronics Research Network, Tohoku Univ. (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月13日(木)

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[A-8-06]Angle dependent spin-orbit interaction in a physically defined silicon double quan-tum dot

^○M. Marx^1,2, J. Yoneda², T. Otsuka², K. Takeda², Y. Yamaoka³, T. Nakajima², S. Li², A. Noiri², T. Kodera³, S. Tarucha^1,2(1.Univ. of Tokyo (Japan), 2.RIKEN (Japan), 3.Tokyo Tech (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月13日(木)

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[A-8-07]Rashba-Edelstein effect in epitaxial Pt/Co bilayers grown on Al₂O₃(0001) substrates

^○Y. Du¹, S. Karube¹, H. Gamou¹, J. Ryu¹, S. Takahashi¹, M. Kohda¹, J. Nitta¹(1.Tohoku Univ. (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月13日(木)

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[A-8-08]Dynamics of Locally Injected Spin Distribution in Undoped GaAs Quantum Wells

^○H. Sanada¹, Y. Kunihashi¹, Y. Tanaka¹, A.M. Stramma¹, H. Gotoh¹, K. Onomitsu¹, M. Kohda², J. Nitta², T. Sogawa¹(1.NTT Basic Research Labs (Japan), 2.Tohoku Univ. (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月13日(木)

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[B-1-01 (Invited)]Highly reliable ReRAM for embedded memory and beyond applications

^○S. Yoneda¹, S. Ito¹, Y. Hayakawa¹, Z. Wei¹, S. Muraoka¹, K. Homma¹, R. Yasuhara¹, K. Kawashima¹, A. Himeno¹, R. Mochida¹, H. Kotani¹, K. Kouno¹, T. Mikawa¹, Y. Gohou¹, T. Kakiage¹(1.Panasonic Semiconductor Solutions Co., Ltd. (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月11日(火)

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[B-1-02]Superior Multilevel Resistive Switching Behaviors of N₂-Plasma-Treated Stacked SiN_x/GdO_x RRAMs

^○Y.T. Chan¹, Y. Fu¹, T.M. Chu¹, J.C. Wang^1,2,3(1.Chang Gung Univ. (Taiwan), 2.Chang Gung Memorial Hospital (Taiwan), 3.Ming Chi Univ. of Tech. (Taiwan))

2018 International Conference on Solid State Devices and Materials2018年9月11日(火)

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[B-1-03]Study on Interfacial Redox Reactions of Tantalum as a Good Scavenger Material in ReRAM Devices

^○A. Tsurumaki-Fukuchi¹, M. Arita¹, Y. Takahashi¹(1.Hokkaido Univ. (Japan))

2018 International Conference on Solid State Devices and Materials2018年9月11日(火)

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