2018 International Conference on Solid State Devices and Materials

2018 International Conference on Solid State Devices and Materials

2018年9月9日〜9月13日University of Tokyo
International Conference on Solid State Devices and Materials
2018 International Conference on Solid State Devices and Materials

2018 International Conference on Solid State Devices and Materials

2018年9月9日〜9月13日University of Tokyo

[A-5-03]Superconducting Boron-doped Diamond Josephson Junction Operating above Liquid He Temperature, 4.2 K

S. Amano1, T. Kageura1, I. Tsuyuzaki1, M. Tachiki2, S. Oi2, K. Hirata2, S. Arisawa2, H. Osato2, D. Tsuya2, Y. Takano2, H. Kawarada1,3(1.Waseda Univ. (Japan), 2.National Institute for Materials Science (Japan), 3.The Kagami Memorial Laboratory for Materials Science and Technology (Japan))
https://doi.org/10.7567/SSDM.2018.A-5-03