2018 International Conference on Solid State Devices and Materials

2018 International Conference on Solid State Devices and Materials

2018年9月9日〜9月13日University of Tokyo
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International Conference on Solid State Devices and Materials
2018 International Conference on Solid State Devices and Materials

2018 International Conference on Solid State Devices and Materials

2018年9月9日〜9月13日University of Tokyo

[A-6-02]Spin Seebeck voltage enhancement by IrMn and Mn insertion at the interface between YIG and nonmagnetic layer

○F. Nakata1, T. Niimura1, Y. Kurokawa1, H. Yuasa1,2(1.Kyushu Univ. (Japan), 2.JST PRESTO (Japan))
https://doi.org/10.7567/SSDM.2018.A-6-02
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