2019 International Conference on Solid State Devices and Materials

2019 International Conference on Solid State Devices and Materials

2019年9月2日〜9月5日Nagoya University
戻る
International Conference on Solid State Devices and Materials
2019 International Conference on Solid State Devices and Materials

2019 International Conference on Solid State Devices and Materials

2019年9月2日〜9月5日Nagoya University

[B-2-02]Si Optical Modulator with Strained SiGe Layer and Ge Photodetector with Lateral PIN Junction for 56 Gbaud Optical Transceiver

○J. Fujikata1, J. Han2, S. Takahashi1, K. Kawashita3, H. Ono1, S.-H. Jeong1, Y. Ishikawa3, M. Takenaka2, T. Nakamura1(1.PETRA (Japan), 2.Univ. of Tokyo (Japan), 3.Toyohashi Univ. Tech. (Japan))
https://doi.org/10.7567/SSDM.2019.B-2-02
PDFダウンロードPDFダウンロード
戻る