2019 International Conference on Solid State Devices and Materials

^○T. Matsushima^1,2,3, C. Qin^1,2, K. Goushi^1,2, F. Bencheikh^1,2, T. Komino^1,2, M. Leyden^1,2, A.S.D. Sandanayaka^1,2, C. Adachi^1,2,3(1.OPERA, Kyushu Univ. (Japan), 2.JST-ERATO (Japan), 3.WPI-I2CNER, Kyushu Univ. (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月3日(火)

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[A-1-03]Observetion of Photoexcited Carrier Recombination in Metal Halide Perovskite Materials with Single and Poly crystalline structures

^○T. Kawane¹, G.J. Matt², S. Shrestha², L. Jevgen², C.J. Brabec², A. Kanak³, P. Fochuk³, M. Kato¹(1.NITech (Japan), 2.i-MEET (Germany), 3.Chernivtsi National Univ. (Ukraine))

2019 International Conference on Solid State Devices and Materials 2019年9月3日(火)

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[A-1-04]Temperature dependence of CH ₃NH ₂molecular defect in CH ₃NH ₃PbI ₃thin film formed by sequential vacuum evaporation

^○M.-C. Jung¹, I. Maeng², A. Matsuyama¹, R. Abe¹, J.-H. Yun³, M. Nakamura¹(1.Nara Institute of Science and Technology (Japan), 2.Gwangju Institute of Science and Technology (Korea), 3.Univ. of Queensland (Australia))

2019 International Conference on Solid State Devices and Materials 2019年9月3日(火)

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[A-1-05]Highly controllable molecular rectifier realized by interfacial design in molecular heterojunction with two-dimensional materials

^○J. Shin¹, S. Yang¹, T. Lee², C.-H. Lee¹, G. Wang¹(1.Korea Univ. (Korea), 2.Seoul National Univ. (Korea))

2019 International Conference on Solid State Devices and Materials 2019年9月3日(火)

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[A-2-01 (Invited)]Processing rules and materials in high-resolution printing for electronic devices

^○Y. Kusaka¹(1.AIST (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月3日(火)

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[A-2-02]Ordered Crystalline Film Growth of Tips-Pentacene and Perovskite by Ultra-sonic Printing and their Application in Photodetectors

^○C. Liu¹, C. Liu¹, H. Zhou²(1.Sun Yat-Sen Univ. (China), 2.Peking Univ. (China))

2019 International Conference on Solid State Devices and Materials 2019年9月3日(火)

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[A-2-03]Generation of one-dimensional metal-atom nano-rods in insulating SAM films: first-principles study

^○S. Watanabe¹, T. Nakayama¹(1.Chiba Univ. (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月3日(火)

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[A-2-04]Thermal stability of the p/n doped organic diodes prepared by evaporative spray deposition using ultradilute solution

^○K. Fujita¹, T. Harada¹(1.Kyushu Univ. (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月3日(火)

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[A-2-05]Preparation of Surface-Tethered Polymer Thin Films by Vapor Deposition Assisted by Thiol-ene Reaction

T. Saito¹, T. Izumi¹, K. Tanaka¹, R.C. Advincula²,^○H. Usui¹(1.Tokyo Univ. Agricu. & Technol. (Japan), 2.Case Western Reserve Univ. (USA))

2019 International Conference on Solid State Devices and Materials 2019年9月3日(火)

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[A-2-06]Epitaxial growth of mesogenic tetrabenzotriazaporphyrin in freezing process from supercooled liquid crystal state

^○A. Fujii¹, T. Kitagawa¹, M. Fujisaki¹, S. Nagano², N. Tohnai¹, M. Ozaki¹(1.Osaka Univ. (Japan), 2.Nagoya Univ. (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月3日(火)

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[A-3-01 (Invited)]DNA detection by Electrochemical Impedance Spectroscopy

H. Han¹, N.B. Sabani¹, F. Takei^1,2, K. Nobusawa¹,^○I. Yamashita¹(1.Osaka Univ. (Japan), 2.National Defense Medical College (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月4日(水)

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[A-3-02]Organic Material-based Artificial Synaptic Device for Neuromorphic Applications

^○S. Ham¹, M. Kang², S. Jang¹, J. Jang¹, T.-W. Kim², G. Wang¹(1.Univ.of Korea (Korea), 2.Korea Inst. of Sci. and Tech. (Korea))

2019 International Conference on Solid State Devices and Materials 2019年9月4日(水)

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[A-3-03]High sensitive biosensor with extended-gate ISFETs based on in-plane-gate structure a-IGZO TFTs with engineered gate oxide

^○J.H. Jeon¹, W.J. Cho¹(1.Univ. of Kwangwoon (Korea))

2019 International Conference on Solid State Devices and Materials 2019年9月4日(水)

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[A-3-04]Electric Signal Transmission in Seawater using Diamond Solution Gate FET as Receiver

^○K. Tadenuma¹, Y. Iyama¹, Y.H. Chang¹, Y. Shintani¹, H. Kawarada^1,2(1.Waseda Univ. (Japan), 2.The Kagami Memorial Lab. for Materials Sci. and Tech. (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月4日(水)

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[A-3-05]The Investigation of IGZO Sensing Membrane Applied in Electrolyte-Insulator-Semiconductor (EIS) Biosensors

C.S. Liu¹, C.H. Kao^1,2,3, C.Y. Lin², Y.W. Liu¹, C.F. Lin¹, C.H. Wang¹, M. Das¹,^○Y.H. Lin¹, K.L. Chen¹(1.Chang Gung Univ. (Taiwan), 2.Chang Gung Memorial Hospital (Taiwan), 3.Ming Chi Univ. of Tech. (Taiwan))

2019 International Conference on Solid State Devices and Materials 2019年9月4日(水)

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[A-4-01 (Invited)]Intelligent biophotonic imaging for clinical applications

^○C.-W. Sun¹(1.National Chiao Tung Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials 2019年9月4日(水)

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[A-4-02]Development of Wireless Opto-Neural Probe with Upconversion Nanoparticles (UCNP) for Optogenetics

^○S. Urayama¹, H. Kino¹, T. Fukushima¹, T. Tanaka¹(1.Tohoku Univ. (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月4日(水)

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[A-4-03 (Late News)]A Printed Metal-oxide-free Cathode for Mechanically-durable and Ultra-flexible Organic Photovoltaics

^○Z. Jiang^1,2, K. Fukuda^1,3, T. Someya^1,2,3(1.The Thin-flim Device Lab, RIKEN (Japan), 2.Univ. of Tokyo (Japan), 3.CEMS, RIKEN (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月4日(水)

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[A-5-01 (Invited)]Wearable Respiratory Sensor Measuring Capacitance Constructed Across Skin Allowing Walking Motion

^○M. Sasaki¹(1.Toyota Tech. Inst. (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月5日(木)

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[A-5-02]1-Chip ExG Recording System with Electrode Interface Evaluation Functions for Biologically Safe Recording

^○Z. Qian¹, H. Hashimoto¹, K.M. Lee¹, R. Yabuki¹, B. Du¹, H. Kino¹, T. Fukushima¹, K. Kiyoyama², T. Tanaka¹(1.Tohoku Univ. (Japan), 2.Nagasaki Inst. of Applied Sci. (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月5日(木)

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[A-5-03 (Late News)]Carrier Transport Study on Triphenylamine-Thienothiophene-Based Hole Transport Material by Utilizing MIS-CELIV Method

^○W.J. Kim¹, Y. Nishikawa¹, T.-T. Bui², Q.-D. Dao³, A. Fujii¹, M. Ozaki¹(1.Osaka Univ. (Japan), 2.Univ. de Cergy-Pontoise (France), 3.VNU-Univ. of Science (Viet Nam))

2019 International Conference on Solid State Devices and Materials 2019年9月5日(木)

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[A-5-04 (Late News)]Co-porphyrin–functionalized CVD graphene ammonia sensor with high selectivity to hydrogen.

^○K. Sawada^1,2, T. Tanaka¹, T. Yokoyama², R. Yamachi², Y. Oka³, Y. Chiba³, H. Masai³, J. Terao³, K. Uchida¹(1.Dept. of Materials Engineering. Univ. of Tokyo (Japan), 2.Dept. of Electronics and Electrical Engineering. Keio Univ. (Japan), 3.Dept. of Basic Sci. Graduate School of Arts and Sciences Univ. of Tokyo (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月5日(木)

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[A-6-01 (Invited)]Applicable p-Type Organic Semiconducting Materials

^○T. Okamoto^1,2,3(1.Univ. of Tokyo (Japan), 2.AIST (Japan), 3.PRESTO, JST (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月5日(木)

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[A-6-02]An Extended-Gate Type Organic Transistor Based on a Solution Processable Small-Molecule Semiconductor Capable of Detecting Glutathione in Water

M. Aiko¹, Y. Yamanashi², Y. Sasaki¹, K. Nakahara², T. Minamiki¹, T. Koike²,^○T. Minami¹(1.Univ. of Tokyo (Japan), 2.JNC Petrochemical Corp. (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月5日(木)

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[A-6-03]Development of highly sensitive aqueous chemical sensor using double-gate In-Ga-Zn-O nanofiber thin-film transistor

^○E.K. Hong¹, W.J. Cho¹(1.Univ. of Kwangwoon (Korea))

2019 International Conference on Solid State Devices and Materials 2019年9月5日(木)

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[A-6-04]Experimental study of bias stress degradation of organic thin film transistors

^○K. Oshima¹, M. Saito¹, M. Shintani², K. Kuribara³, Y. Ogasahara³, T. Sato¹(1.Kyoto Univ. (Japan), 2.NAIST (Japan), 3.AIST (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月5日(木)

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[A-6-05]Withdrawn

2019 International Conference on Solid State Devices and Materials 2019年9月5日(木)

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[B-1-01 (Invited)]Hybrid integration of quantum/classical light sources on Si using transfer printing

^○Y. Ota¹, R. Katsumi², A. Osada¹, M. Kakuda¹, S. Iwamoto^1,2, Y. Arakawa¹(1.Nanoquine, Univ. of Tokyo (Japan), 2.IIS, Univ. of Tokyo (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月3日(火)

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[B-1-02]SWIR InGaAs PhotoFETs on Half-inch Si Wafer Using Layer Transfer Technology

^○T. Maeda^1,2, H. Ishii¹, W.H. Chang¹, T. Shimizu¹, H. Ishii^1,2, K. Ohishi^1,2, A. Endoh², H. Fujishiro²(1.AIST (Japan), 2.Tokyo Univ. of Sci. (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月3日(火)

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[B-1-03]Horizontal Slot Waveguides based on Epitaxial Rare-Earth Oxide on Si

^○X. Xu¹, V. Fili¹, T. Inaba¹, T. Tawara^1,2, H. Omi^1,2, H. Gotoh¹(1.NTT Basic Res. Labs. (Japan), 2.NTT Nanophotonics Center (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月3日(火)

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[B-2-01 (Invited)]Ultra-high bandwidth and low-drive voltage InP Mach-Zehnder modulators

^○Y. Ogiso¹(1.NTT Corp. (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月3日(火)

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[B-2-02]Si Optical Modulator with Strained SiGe Layer and Ge Photodetector with Lateral PIN Junction for 56 Gbaud Optical Transceiver

^○J. Fujikata¹, J. Han², S. Takahashi¹, K. Kawashita³, H. Ono¹, S.-H. Jeong¹, Y. Ishikawa³, M. Takenaka², T. Nakamura¹(1.PETRA (Japan), 2.Univ. of Tokyo (Japan), 3.Toyohashi Univ. Tech. (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月3日(火)

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[B-2-03]Double heterojunction Si-Ge-Si pin waveguide photodiodes for high-speed communications at 1550nm wavelength

^○L. Virot¹, D. Benedikovic², G. Aubin², J.-M. Hartmann¹, B. Szelag¹, F. Amar², X. Le Roux², C. Alonso-Ramos², P. Crozat², D. Marris-Morini², E. Cassan², C. Baudot³, F. Boeuf³, J.M. Fédéli¹, C. Kopp¹, L. Vivien²(1.Univ. Grenoble Alpes and CEA, LETI (France), 2.Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Univ. Paris-Saclay (France), 3.STMicroelectronics, Silicon Technology Development (France))

2019 International Conference on Solid State Devices and Materials 2019年9月3日(火)

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[B-2-04]Crossbar array of Si microring resonators for deep learning accelerator

^○S. Ohno¹, K. Toprasertpong¹, S. Takagi¹, M. Takenaka¹(1.Univ. of Tokyo (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月3日(火)

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[B-2-05]Computational design of high-efficiency grating coupler based on deep learning

^○Y. Miyatake¹, N. Sekine¹, K. Toprasertpong¹, S. Takagi¹, M. Takenaka¹(1.Univ. of Tokyo (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月3日(火)

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[B-2-06]Shape optimized nanophotonic devices in 200mm Silicon-On-Insulator platform

^○K. Hassan¹, N. Lebbe¹, L. Baud¹, S. Garcia¹, C. Dapogny², E. Oudet², A. Gliere¹(1.CEA-LETI (France), 2.Univ. Grenoble Alpes, LJK (France))

2019 International Conference on Solid State Devices and Materials 2019年9月3日(火)

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[B-3-01 (Invited)]On-chip coherent LIDAR for imaging: progress and current limitations

^○A. Martin¹, P. Feneyrou¹, J. Bourderionnet¹(1.Thales Research and Technology (France))

2019 International Conference on Solid State Devices and Materials 2019年9月4日(水)

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[B-3-02]Image acquired by FMCW-LiDAR using Slow-light Photonic Crystal Modulator based on Si-Photonics Technology

^○N.J. Jitcharoenchai¹, N. Nishiyama¹, H. Abe², Y. Hinakura², T. Baba²(1.Tokyo Inst. of Tech. (Japan), 2.Yokohama National Univ. (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月4日(水)

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[B-3-03]Silicon Photonics Co-integrated with Silicon Nitride for Optical Phased Arrays

^○A. Marinins¹, S.P. Dwivedi¹, J. Ø. Kjellman¹, S. Kerman, T. David¹, B. Figeys¹, R. Jansen¹, D.S. Tezcan¹, X. Rottenberg¹, P. Soussan¹(1.imec (Belgium))

2019 International Conference on Solid State Devices and Materials 2019年9月4日(水)

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[B-5-01 (Invited)]Graphene-Based Optical Modulators for Next Generation Datacom

^○C. Alessandri^1,2, I. Asselberghs¹, S. Brems¹, C. Huyghebaert¹, J.V. Campenhout¹, D.V. Thourhout², M. Pantouvaki¹(1.Imec (Belgium), 2.Ghent Univ. (Belgium))

2019 International Conference on Solid State Devices and Materials 2019年9月5日(木)

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[B-5-02]Photoresponsivity Evaluation of a Multi-Channel Graphene Nanoribbon based Field Effect Transistor Structure

^○J.A. Goundar¹, K. Suzuki², H. Miura²(1.Department of Finemechanics, Graduate School of Engineering, Tohoku Univ. (Japan), 2.Fracture and Reliability Research Institute, Graduate School of Engineering, Tohoku Univ. (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月5日(木)

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[B-5-03]Optical Gain in Mid-Refractive Index Contrast (Er _0.1Y _0.9) ₂Zr ₂O ₇ /SiO ₂ Waveguide Prepared by Radical Assisted Sputtering

K. Miyagi¹, Y. Tanaka^1,2, A. Minowa¹, G. Nakamura¹,^○H. Isshiki¹(1.The Univ. of Electro-Communications (Japan), 2.Shincron Co., LTD. (Japan))

2019 International Conference on Solid State Devices and Materials 2019年9月5日(木)

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