2020 International Conference on Solid State Devices and Materials

2020 International Conference on Solid State Devices and Materials

2020年9月27日〜9月30日
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International Conference on Solid State Devices and Materials
2020 International Conference on Solid State Devices and Materials

2020 International Conference on Solid State Devices and Materials

2020年9月27日〜9月30日

[A-4-02 (Late News)]Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities

〇Hiroki Kanakogi1, Wei-Chen Wen1, Keisuke Yamamoto1, Dong Wang1, Hiroshi Nakashima2(1. Interdisciplinary Graduate School of Engineering Sci., Kyushu Univ.(Japan), 2. Global Innovation Center, Kyushu Univ.(Japan))
https://doi.org/10.7567/SSDM.2020.A-4-02
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