2020 International Conference on Solid State Devices and Materials

2020 International Conference on Solid State Devices and Materials

2020年9月27日〜9月30日
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International Conference on Solid State Devices and Materials
2020 International Conference on Solid State Devices and Materials

2020 International Conference on Solid State Devices and Materials

2020年9月27日〜9月30日

[A-6-04]Chemical Structure of SiN Films Deposited on High Aspect Trench by Plasma Enhanced Atomic Layer Deposition

〇Tappei Nishihara1, Ryo Yokogawa1,2, Yuji Otsuki3, Munehito Kagaya3, Atsushi Ogura2,1(1. Meiji Univ.(Japan), 2. Meiji Renewable Energy Lab.(Japan), 3. Tokyo Electron Technology Solutions Ltd.(Japan))
https://doi.org/10.7567/SSDM.2020.A-6-04
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