2020 International Conference on Solid State Devices and Materials

2020 International Conference on Solid State Devices and Materials

2020年9月27日〜9月30日
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International Conference on Solid State Devices and Materials
2020 International Conference on Solid State Devices and Materials

2020 International Conference on Solid State Devices and Materials

2020年9月27日〜9月30日

[A-6-06]ON current enhancement and single-electron transport in tunnel FETs by a new isoelectronic trap impurity of beryllium

〇Yoshisuke Ban1, Kimihiko Kato2, Shota Iizuka2, Satoshi Moriyama3, Koji Ishibashi1, Keiji Ono1, Takahiro Mori2(1. RIKEN(Japan), 2. AIST(Japan), 3. Tokyo Denki Univ. (TDU)(Japan))
https://doi.org/10.7567/SSDM.2020.A-6-06
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