Session Details
[2A06-09]Semiconductor Detector
Thu. Sep 6, 2018 10:50 AM - 11:55 AM JST
Thu. Sep 6, 2018 1:50 AM - 2:55 AM UTC
Thu. Sep 6, 2018 1:50 AM - 2:55 AM UTC
Room A B11 -B Building
Chair:Ikuo Kanno(Kyoto Univ.)
[2A06]Electric characteristics and radiation detection characteristics of BGaN semiconductor detectors
*Natsuki Yamada1, Takayuki Maruyama1, Hisaya Nakagawa1, Yoku Inoue1, Toru Aoki2, Takayuki Nakano1 (1. Shizuoka Univ., 2. R.I.E. Shizuoka Univ.)
[2A07]A joint Japan-UK research project for radiation mapping technology development using diamond in ultra-high dose environments
*Yoshiyuki Takahashi1, Chris Hutson2, Koichi Takamiya1, Hironobu Unesaki1, Thomas Scott2 (1. Institute for Integrated radiation and nuclear science, Kyoto university, 2. South West Nuclear Hub, University of Bristol)
[2A08]Temperature dependence of signal charge transport characteristics of TlBr semiconductor detector
*Ryota Komine1, Dinh Xuan HOANG1, Ayumu Hashimoto1, Keisuke Maehata1, Naoko Iyomoto1, Hideaki Onabe2, Keitaro Hitomi3, Toshiyuki Onodera4 (1. Kyushu Univ., 2. Raytech, 3. Tohoku Univ., 4. Tohoku Inst. Tech.)
[2A09]Evaluation of fundamental characteristics of TlBr detectors in intense radiation fields
*Mitsuhiro Nogami1, Keitaro Hitomi1, Keizo Ishii1, Toshiyuki Onodera2, Kenichi Watanabe3, Tatsuo Torii4, Yuki Sato4, Yoshihiko Tanimura4, Kuniaki Kawabata4, Hiroyuki Takahashi5 (1. Tohoku University, 2. Tohoku Institute of Technology, 3. Nagoya University, 4. Japan Atomic Energy Agency, 5. University of Tokyo)
