[MoA3] III-Vs on Si (I)

2:00 PM - 2:30 PM JST(5:00 AM - 5:30 AM UTC)

[MoA3-01 Invited] New laser device concepts in Silicon photonics enabled by Nano-Ridge Engineering

〇Davide Colucci¹, Dries Van Thourhout², Joris Van Campenhout¹, Bernardette Kunert¹ (1. imec (Belgium), 2. The Univ. of Ghent (Belgium))

Silicon photonics is a promising platform for high-volume data transmission, sensing and quantum technologies, yet the lack of an integrated light source remains a major challenge. While heterogeneous III–V integration is advancing, monolithic integration offers superior integration density, cost efficiency, and scalability but is limited by lattice-mismatch induced defects. Nano-Ridge Engineering (NRE) enables the epitaxial growth of high-crystal-quality III–V materials on 300 mm silicon substrates through selective area growth and aspect-ratio trapping of relaxation defects, while maintaining close proximity to the silicon substrate for efficient coupling to optical waveguides. A recent electrically pumped laser demonstration has shown the viability of this approach for scalable, CMOS-compatible laser integration. Beyond this proof of feasibility, nano-ridge engineering (NRE) also serves as a platform for developing new laser device concepts.