CSW2026
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Session Details

Oral SessionScope A:Epitaxy and process technologies

[MoA3]III-Vs on Si (I)

Mon. May 25, 2026 2:00 PM - 4:00 PM JST
Mon. May 25, 2026 5:00 AM - 7:00 AM UTC
Room A(3rd floor)
Chair:Gregor Koblmüller(TU Berlin), Tomonari Sato(NTT)
2:00 PM - 2:30 PM JST(5:00 AM - 5:30 AM UTC)

[MoA3-01]New laser device concepts in Silicon photonics enabled by Nano-Ridge Engineering

〇Davide Colucci1, Dries Van Thourhout2, Joris Van Campenhout1, Bernardette Kunert1 (1. imec (Belgium), 2. The Univ. of Ghent (Belgium))
Comment()
2:30 PM - 3:00 PM JST(5:30 AM - 6:00 AM UTC)

[MoA3-02]Monolithic III–V Membrane Integration on SOI by Tunnel Epitaxy

Zhao YAN1, Yifu Chen2, Martin Ebert2, Ka Ming Wong1, Wenjie Wang2, Tim Grieb3, Florian F. Krause3, Andreas Rosenauer3, Graham T. Reed2, David J. Thomson2, 〇Qiang Li1 (1. Cardiff Univ. (UK), 2. Univ. of Southampton (UK), 3. Univ. of Bremen (Germany))
Comment()
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[MoA3-03]Improved InP HBT reliability by strain-engineered epitaxy on InPOSi

〇Reynald Alcotte1, Yves Mols1, Zhao Xiang Guo1, Abhitosh Vais1, Sachin Yadav1, Michiel De Maeyer2, Peter Swekis1, Cesar Roda Neve3, Bruno Ghyselen3, Uthayasankaran Peralagu1, Bertrand Parvais1, Nadine Collaert1, Robert Langer1, Bernardette Kunert1 (1. imec (Belgium), 2. Univ. of Ghent (Belgium), 3. Soitec (France))
Comment()
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[MoA3-04]High-Performance MWIR InSb nBn Photodetector Monolithically
Grown on On-Axis (001) Silicon

〇Kenneth Duque1,2, Tsimafei Laryn1,2, Seungwan Woo1,3, Eungbeom Yeon1,4, Yeonhwa Kim1,4, Won Jun Choi1, Daehwan Jung1,2 (1. Korea Inst. of Sci. & Tech. (Korea), 2. KIST School at Univ. of Sci. and Tech. (Korea), 3. Seoul National Univ. (Korea), 4. Korea Univ. (Korea))
Comment()
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[MoA3-05]Lateral Epitaxy of InP/InGaAs/InP Structures on SOI for FinFETs

〇Xiangquan LIU1, Ziyang GONG1, Weizhuo LIU1, Renqiang ZHU1, Kei May LAU1 (1. The Hong Kong Univ. of Sci. and Tech. (Hong Kong))
Comment()
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[MoA3-06]Selective-area growth of InGaAs and InAs nanowires on Si using SiON/W/SiO2 composite mask for vertical multi-mode transistor

〇Keita Taniyama1, Hitoshi Watanabe1, Yuki Takeda1, Yuki Azuma1, Katsuhiro Tomioka1 (1. Hokkaido Univ. (Japan))
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