[MoA3] III-Vs on Si (I)

2:30 PM - 3:00 PM JST(5:30 AM - 6:00 AM UTC)

[MoA3-02 Invited] Monolithic III–V Membrane Integration on SOI by Tunnel Epitaxy

Zhao YAN¹, Yifu Chen², Martin Ebert², Ka Ming Wong¹, Wenjie Wang², Tim Grieb³, Florian F. Krause³, Andreas Rosenauer³, Graham T. Reed², David J. Thomson², 〇Qiang Li¹ (1. Cardiff Univ. (UK), 2. Univ. of Southampton (UK), 3. Univ. of Bremen (Germany))

We present a monolithic III–V membrane integration platform on silicon-on-insulator enabled by tunnel epitaxy initiated from a Si V-groove, forming laterally extended InP and InAs membranes above Si waveguides. Using this approach, we demonstrate high-quality InP membranes with embedded InGaAs multi-quantum wells (MQWs). Atomic-resolution strain mapping reveals an anisotropic strain state in (110)-oriented quantum wells, corresponding to a high indium composition (~82.6%) from a pseudomorphic biaxial-strain analysis, indicating the feasibility of highly compressively strained MQWs in thin-membrane epitaxy. In-situ doping enables controlled in-plane profiles for lateral p–i–n InP membrane photodetectors with 1550-nm response, <200 nA dark current (10-µm length), 24-GHz 3-dB bandwidth, and open 50-Gb/s eye diagrams; length scaling indicates carrier-transit-time-governed operation. Finally, we extend the same approach to InAs membranes on SOI despite the large lattice mismatch, confining defects near the V-groove nucleation region and demonstrating rectifying InAs p–i–n diodes under low-temperature operation.