Presentation Information
[MoA3-03]Improved InP HBT reliability by strain-engineered epitaxy on InPOSi
〇Reynald Alcotte1, Yves Mols1, Zhao Xiang Guo1, Abhitosh Vais1, Sachin Yadav1, Michiel De Maeyer2, Peter Swekis1, Cesar Roda Neve3, Bruno Ghyselen3, Uthayasankaran Peralagu1, Bertrand Parvais1, Nadine Collaert1, Robert Langer1, Bernardette Kunert1 (1. imec (Belgium), 2. Univ. of Ghent (Belgium), 3. Soitec (France))
Password required to view
Comment
To browse or post comments, you must log in.Log in