[MoA3] III-Vs on Si (I)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[MoA3-04] High-Performance MWIR InSb nBn Photodetector Monolithically
Grown on On-Axis (001) Silicon

〇Kenneth Duque^1,2, Tsimafei Laryn^1,2, Seungwan Woo^1,3, Eungbeom Yeon^1,4, Yeonhwa Kim^1,4, Won Jun Choi¹, Daehwan Jung^1,2 (1. Korea Inst. of Sci. & Tech. (Korea), 2. KIST School at Univ. of Sci. and Tech. (Korea), 3. Seoul National Univ. (Korea), 4. Korea Univ. (Korea))

InSb photodetector is a key technology for mid-wavelength infrared (MWIR) imaging. We report the first InSb nBn photodetectors heteroepitaxially grown on on-axis (001) Si substrates. The InSb nBn detectors are grown on high quality InSb/Si template and show photoresponse at MWIR with cutoff wavelength of ~5.6 μm at 77K.