[MoA3] III-Vs on Si (I)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[MoA3-06] Selective-area growth of InGaAs and InAs nanowires on Si using SiON/W/SiO₂ composite mask for vertical multi-mode transistor

〇Keita Taniyama¹, Hitoshi Watanabe¹, Yuki Takeda¹, Yuki Azuma¹, Katsuhiro Tomioka¹ (1. Hokkaido Univ. (Japan))

In this report, we characterized the selective-area growth (SAG) of InGaAs nanowires (NWs) on Si-on-insulator (SOI) (111) using a SiON/tungsten (W)/SiO₂ composite mask and demonstrated a vertical gate-all-around (VGAA) multi-mode transistor using InAs NWs on the composite-masked substrates. In the SAG of InGaAs NWs, we directly integrated vertical InGaAs NWs on composite-masked SOI substrates. The VGAA multi-mode transistor showed both high-mobility InAs FET and Si/InAs tunnel FET (TFET) properties. In addition, the transistor exhibited an external bias-controlled V_TH-shift and self-recovering phenomenon in the TFET-switching mode by using the W layer in the composite mask as an additional electrode.