Presentation Information

[MoA3-06]Selective-area growth of InGaAs and InAs nanowires on Si using SiON/W/SiO2 composite mask for vertical multi-mode transistor

〇Keita Taniyama1, Hitoshi Watanabe1, Yuki Takeda1, Yuki Azuma1, Katsuhiro Tomioka1 (1. Hokkaido Univ. (Japan))

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