Presentation Information
[MoA3-06]Selective-area growth of InGaAs and InAs nanowires on Si using SiON/W/SiO2 composite mask for vertical multi-mode transistor
〇Keita Taniyama1, Hitoshi Watanabe1, Yuki Takeda1, Yuki Azuma1, Katsuhiro Tomioka1 (1. Hokkaido Univ. (Japan))
Password required to view
Comment
To browse or post comments, you must log in.Log in
