[MoA4] III-Vs on Si (II)

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[MoA4-03] Growth of GaSb Nano-ridges on (001) Si for Light Emission in the Short-wave Infrared

〇Michiel De Maeyer^1,2, Yves Mols², Reynald Alcotte², Davide Colucci², Peter Swekis², Zhao Xiang Guo², Robert Langer², Dries Van Thourhout^1,2, Bernardette Kunert² (1. Ghent University (Belgium), 2. Imec (Belgium))

We report on the monolithic integration of strained InGa(As)Sb quantum wells (QWs) on (001) Si via the growth of high crystal quality GaSb nano-ridges (NRs) by metal-organic vapor phase epitaxy (MOVPE). By carefully adjusting the deposition conditions, In_0.2Ga_0.8Sb QWs were successfully deposited. A low defect density in the NR crystal was confirmed by transmission electron microscopy and room-temperature photoluminescence around 1.9 µm. The addition of arsenic allowed for the extension of the emission wavelength to 2.1 µm. Lastly, AlGaSb surface capping layers were implemented to enhance carrier confinement and suppress surface-related recombination.