CSW2026
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Session Details

Oral SessionScope A:Epitaxy and process technologies

[MoA4]III-Vs on Si (II)

Mon. May 25, 2026 4:30 PM - 6:15 PM JST
Mon. May 25, 2026 7:30 AM - 9:15 AM UTC
Room A(3rd floor)
Chair:Bei Shi(Univ. of Texas), Katsuhiro Tomioka(Hokkaido Univ.)
4:30 PM - 5:00 PM JST(7:30 AM - 8:00 AM UTC)

[MoA4-01]Monolithic Integration of III-V Lasers on SOI using Selective Lateral Heteroepitaxy

〇Yu Han1, Cong Zeng1, Zhenhua Wu1, Yingzhi Zhao1, Zili Lei1 (1. Sun Yat-sen University (China))
Comment()
5:00 PM - 5:30 PM JST(8:00 AM - 8:30 AM UTC)

[MoA4-02]InAs/InAlGaAs quantum dot laser on InP and Si substrates

Hui Jia1, Jae-Seong Park1, Jun Li1, Kongming Liu1, Jiajing Yuan1, Yangqian Wang1, Mingchu Tang1, 〇Huiyun Liu1 (1. University College London (UK))
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5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[MoA4-03]Growth of GaSb Nano-ridges on (001) Si for Light Emission in the Short-wave Infrared

〇Michiel De Maeyer1,2, Yves Mols2, Reynald Alcotte2, Davide Colucci2, Peter Swekis2, Zhao Xiang Guo2, Robert Langer2, Dries Van Thourhout1,2, Bernardette Kunert2 (1. Ghent University (Belgium), 2. Imec (Belgium))
Comment()
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[MoA4-04]Thin and Highly Doped Semi-Insulating InP:Fe Layer for Heterogeneously Integrated III-V Lasers on an Industrial Silicon Photonics Platform

〇Camélia Lourdiane1,2, Delphine Néel1, Dalila Make1, Joan Manel Ramirez1, Frédéric Pommereau1, Jean Decobert1, Eric Tournié2, Jean-Baptiste Rodriguez2, Toufiq Bria3, Franck Fournel3, Claire Besancon1 (1. III-V Lab (France), 2. IES, Université de Montpellier, CNRS (France), 3. Université Grenoble Aples, CEA LETI (France))
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6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[MoA4-05]Wafer-Scale Growth of Twin-Free InP Micro-Templates on 2-inch SOI (001) Substrates Using the Lateral ART Method

〇Hiroya Homma1, Hiroki Sugiyama1, Tatsurou Hiraki1, Takuro Fujii1, Tomonari Sato1, Shinji Matsuo1 (1. NTT, Inc. (Japan))
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