[MoA4] III-Vs on Si (II)

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[MoA4-04] Thin and Highly Doped Semi-Insulating InP:Fe Layer for Heterogeneously Integrated III-V Lasers on an Industrial Silicon Photonics Platform

〇Camélia Lourdiane^1,2, Delphine Néel¹, Dalila Make¹, Joan Manel Ramirez¹, Frédéric Pommereau¹, Jean Decobert¹, Eric Tournié², Jean-Baptiste Rodriguez², Toufiq Bria³, Franck Fournel³, Claire Besancon¹ (1. III-V Lab (France), 2. IES, Université de Montpellier, CNRS (France), 3. Université Grenoble Aples, CEA LETI (France))

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