[MoA4] III-Vs on Si (II)

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[MoA4-04] Thin and Highly Doped Semi-Insulating InP:Fe Layer for Heterogeneously Integrated III-V Lasers on an Industrial Silicon Photonics Platform

〇Camélia Lourdiane^1,2, Delphine Néel¹, Dalila Make¹, Joan Manel Ramirez¹, Frédéric Pommereau¹, Jean Decobert¹, Eric Tournié², Jean-Baptiste Rodriguez², Toufiq Bria³, Franck Fournel³, Claire Besancon¹ (1. III-V Lab (France), 2. IES, Université de Montpellier, CNRS (France), 3. Université Grenoble Aples, CEA LETI (France))

III-V-on-silicon integration allows combining the industrial maturity of silicon with the advanced optical properties of III-V materials for compact and cost-effective photonic devices. However, efficiently coupling conventional micron-thick, vertically injected III-V PIN waveguides to the standardized 220 nm thick silicon waveguides used in silicon photonics foundries remains challenging due to a strong effective index mismatch. We propose a remote-head III-V laser architecture compatible with a standard silicon photonics platform, enabled by bonding and regrowth techniques and Semi-Insulated Buried Heterostructures (SIBH). This approach relies on a thin, highly resistive semi-insulating InP:Fe layer for effective current blocking. n-SI-n test diodes were fabricated to study the electrical properties of InP:Fe layers, showing that a 500 nm highly doped layer reaches a resistance of 1 megaohm, meeting the current blocking requirement for the remote-head laser. In parallel, the first epitaxial regrowth steps of the remote-head laser structure were successfully demonstrated.