Presentation Information

2:00 PM - 2:30 PM JST(5:00 AM - 5:30 AM UTC)

[MoB3-01]Bulk rutile-GeO₂ single crystals, epi-ready wafers, and physical properties – a comparison with beta-Ga₂O₃ and beta-(Al_xGa_1-x)₂O₃ single crystals.

〇Zbigniew Galazka¹, Andreas Fiedler¹, Saud Bin Anooz¹, Albert Kwasniewski¹, Uta Juda¹, Roberts Blukis¹, Tobias Schulz¹, Martin Albrecht¹, Steffen Ganschow¹, Thomas Schroeder^1,2, Matthias Bickermann^1,3 (1. Leibniz-Institut für Kristallzüchtung (IKZ) (Germany), 2. Humboldt-Universität zu Berlin, Institut für Physik (Germany), 3. Technische Universität Berlin, Institut für Chemie (Germany))

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[MoB3-01]Bulk rutile-GeO2 single crystals, epi-ready wafers, and physical properties – a comparison with beta-Ga2O3 and beta-(AlxGa1-x)2O3 single crystals.

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[MoB3-01]Bulk rutile-GeO₂ single crystals, epi-ready wafers, and physical properties – a comparison with beta-Ga₂O₃ and beta-(Al_xGa_1-x)₂O₃ single crystals.