CSW2026
Advanced Search

Session Details

Oral SessionScope G: Oxide materials and devices

[MoB3]Crystal Growth & Characterization of Oxides

Mon. May 25, 2026 2:00 PM - 4:00 PM JST
Mon. May 25, 2026 5:00 AM - 7:00 AM UTC
Room B(3rd floor)
Chair:Hiroyuki Nishinaka(Kyoto Institute of Technology)
2:00 PM - 2:30 PM JST(5:00 AM - 5:30 AM UTC)

[MoB3-01]Bulk rutile-GeO2 single crystals, epi-ready wafers, and physical properties – a comparison with beta-Ga2O3 and beta-(AlxGa1-x)2O3 single crystals.

〇Zbigniew Galazka1, Andreas Fiedler1, Saud Bin Anooz1, Albert Kwasniewski1, Uta Juda1, Roberts Blukis1, Tobias Schulz1, Martin Albrecht1, Steffen Ganschow1, Thomas Schroeder1,2, Matthias Bickermann1,3 (1. Leibniz-Institut für Kristallzüchtung (IKZ) (Germany), 2. Humboldt-Universität zu Berlin, Institut für Physik (Germany), 3. Technische Universität Berlin, Institut für Chemie (Germany))
Comment()
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[MoB3-02]Growth Kinetics and In-situ Etching in the Metalorganic Vapor Phase Epitaxy of GeO2

〇Giuditta Cicconi1,2, Matteo Bosi2, Wenshan Chen3, Oliver Bierwagen3, Andrea Baraldi1, Francesco Mezzadri4, Luca Seravalli2, Antonella Parisini1, Roberto Fornari1,2, Piero Mazzolini1,2 (1. Department of Mathematical, Physical and Computer Sciences, Univ. of Parma, Parma (Italy), 2. IMEM-CNR, Parma (Italy), 3. Paul-Drude-Inst. for Solid State Electronics, Berlin (Germany), 4. Department of Chemical, Life and Environmental Sustainability Sciences, Univ. of Parma, Parma (Italy))
Comment()
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[MoB3-03]Stabilization of Rutile GeO2 by Graded GexSn1-xO2 Buffer Layers

〇Kazuki Shimazoe1, Kazutaka Kanegae2, Hiroyuki Nishinaka2, Masashi Kato1 (1. Nagoya Inst. Tech. (Japan), 2. Kyoto Inst. Tech. (Japan))
Comment()
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[MoB3-04]Pseudo-cubic representation of the monoclinic β-Ga2O3 structure

〇Takayoshi Oshima1 (1. NIMS (Japan))
Comment()
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[MoB3-05]Polarity- and Annealing-Dependent Scintillation Properties of Hydrothermally Grown c-Plane ZnO Single Crystals

〇Takami Abe1, Toshiaki Kunikata2, Shota Otake2, Haruaki Ezawa2, Yusuke Endo2, Takayuki Yanagida2 (1. Iwate Univ. (Japan), 2. NAIST (Japan))
Comment()
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[MoB3-06]Photoluminescence Studies of Ga2O3-based Ultrawide Bandgap Semiconductor Thin Films by Molecular Beam Epitaxy

〇Jianlin Liu1 (1. Univ. of California, Riverside (USA))
Comment()
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[MoB3-07]Accelerated Bixbyite Ordering in Er:Gd2O3 on Si(111) via GdOx Templating

〇Tomohiro Inaba1, Xuejun Xu1, Hiroo Omi2, Takehiko Tawara3, Hideki Yamamoto1, Haruki Sanada1 (1. NTT BRL (Japan), 2. Yamato Univ. (Japan), 3. Nihon Univ. (Japan))
Comment()
Back to Category List