[MoB3] Crystal Growth & Characterization of Oxides

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[MoB3-02] Growth Kinetics and In-situ Etching in the Metalorganic Vapor Phase Epitaxy of GeO₂

〇Giuditta Cicconi^1,2, Matteo Bosi², Wenshan Chen³, Oliver Bierwagen³, Andrea Baraldi¹, Francesco Mezzadri⁴, Luca Seravalli², Antonella Parisini¹, Roberto Fornari^1,2, Piero Mazzolini^1,2 (1. Department of Mathematical, Physical and Computer Sciences, Univ. of Parma, Parma (Italy), 2. IMEM-CNR, Parma (Italy), 3. Paul-Drude-Inst. for Solid State Electronics, Berlin (Germany), 4. Department of Chemical, Life and Environmental Sustainability Sciences, Univ. of Parma, Parma (Italy))

Rutile GeO₂ is affirming itself as a promising ultra-wide bandgap semiconductor for power electronics applications. In this work we demonstrate that - during deposition in a metalorganic vapor phase epitaxy environment - the formation and partial desorption of the intermediate suboxide GeO can limit its growth window. Moreover, we propose a reaction pathaway for GeO₂ deposition, starting from isobutylgermane and O₂ as precursors. In the end, by strategically exploiting GeO desorption, we demonstrate the possibility to obtain a controlled etching of the material, as a function of the provided isobutylgermanium flux.