Presentation Information
[MoB3-06]Photoluminescence Studies of Ga2O3-based Ultrawide Bandgap Semiconductor Thin Films by Molecular Beam Epitaxy
〇Jianlin Liu1 (1. Univ. of California, Riverside (USA))
This study explores photoluminescence (PL) characteristics of Ga2O3-based ultrawide bandgap oxide semiconductors including MgGaO and ZnGaO thin films grown via plasma-assisted molecular beam epitaxy. Bandgap engineering and alloy phase evolution are studied. PL studies reveal optical transitions of these materials. This study enhances our understanding and provides insights for advancing electronic and optoelectronic applications of Ga2O3-based semiconductors.
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