[MoB3] Crystal Growth & Characterization of Oxides

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[MoB3-07] Accelerated Bixbyite Ordering in Er:Gd₂O₃ on Si(111) via GdO_x Templating

〇Tomohiro Inaba¹, Xuejun Xu¹, Hiroo Omi², Takehiko Tawara³, Hideki Yamamoto¹, Haruki Sanada¹ (1. NTT BRL (Japan), 2. Yamato Univ. (Japan), 3. Nihon Univ. (Japan))

Er-doped Gd2O3 (Er:Gd2O3) is a promising oxide for silicon photonics. However, bixbyite-phase ordering on Si(111) at the early growth stage is often hampered by unintentional oxidation of the Si surface, which can generate incoherent crystalline domains and/or competing phases. We investigated bixbyite-phase formation using real-time RHEED, TEM, and XRD. Reciprocal-lattice analyses of the RHEED patterns, focusing on weak auxiliary (superstructure) streaks, show that the bixbyite phase emerges accompanied by oxygen-vacancy ordering. Preparing a GdOx template layer on Si via a redox reaction efficiently promotes bixbyite Er:Gd2O3 formation and lattice coherence.