[MoB4] Novel vdW Heterostructures

4:30 PM - 5:00 PM JST(7:30 AM - 8:00 AM UTC)

[MoB4-01 Invited] Property at Interfaces of Contact Metals and Monolayer 2D Semiconductor

〇Chun-Liang Lin¹ (1. National Yang Ming Chiao Tung Univ. (Taiwan))

Transition-metal dichalcogenides (TMDs), as members of the two-dimensional (2D) material family, exhibit potential for next-generation semiconductor applications. However, the complex interfacial mechanisms between TMDs and metals, including orbital hybridization and interface dipole redistribution, often lead to unfavorable contact resistance, which in turn increases energy consumption and degrades overall device performance. Here, we have studied the interfacial properties of both metal and semimetal to monolayer TMD systems based on a peel and flip method. By using different characterizing methods, the properties of monolayer MoS₂ and WS₂ on a variety of metals are investigated. It reveals a consistent band-gap reduction behavior across various contact configurations, resulting from orbital hybridization at the interface.