Session Details
[MoB4]Novel vdW Heterostructures
Mon. May 25, 2026 4:30 PM - 6:00 PM JST
Mon. May 25, 2026 7:30 AM - 9:00 AM UTC
Mon. May 25, 2026 7:30 AM - 9:00 AM UTC
Room B(3rd floor)
Chair:Rai Moriya(The Univ. of Tokyo)
[MoB4-01]Property at Interfaces of Contact Metals and Monolayer 2D Semiconductor
〇Chun-Liang Lin1 (1. National Yang Ming Chiao Tung Univ. (Taiwan))
[MoB4-02]Direct probing of spin splitting in WSe2-proximitized graphene via momentum-conserving resonant tunneling
〇Jimpei Kawase1, Yuta Seo1, Rai Moriya1, Kenji Watanabe2, Takashi Taniguchi2, Tomoki Machida1 (1. IIS, Univ. of Tokyo (Japan), 2. NIMS (Japan))
[MoB4-03]Multi-scale Modeling of Monolayer InSe MOSFETs: From First-principles Carrier Transport to Performance Limits of Double-Gate and GAA Architectures
〇Huan-Ming Zhang1, Xi-chun Fang1, Yuh-Renn Wu1 (1. National Taiwan University (Taiwan))
[MoB4-04]Near-Lossless Phase Modulators Using Hybrid Tungsten Oxyselenide/Graphene Transparent Electrodes
Shi Guo1, 〇Sung-Gyu Lee1, Xiangxin Gong1, Sang Hoon Chae1 (1. Nanyang Tech. Univ. (Singapore))
[MoB4-05]Chlorinated Polyvinyl Chloride Stamps with High Adhesion for Origami Folding of 2D Materials
〇Momoko Onodera1, Rai Moriya1, Kenji Watanabe2, Takashi Taniguchi2, Tomoki Machida1 (1. University of Tokyo (Japan), 2. National Institute for Materials Science (Japan))
